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參數(shù)資料
| 型號(hào)： | IRFI9Z34N |
| 廠商： | International Rectifier |
| 英文描述： | P Channel Straight Lead HEXFET Power MOSFET(P溝道HEXFET功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | P通道直鉛HEXFET功率MOSFET的性（P溝道的HEXFET功率馬鞍山場(chǎng)效應(yīng)管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 120K |
| 代理商： | IRFI9Z34N |
IRFI9Z34N
HEXFET
Power MOSFET
PD - 9.1530A
Parameter
Max.
-14
-10
- 68
37
0.24
± 20
180
-10
3.7
-5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Absolute Maximum Ratings
Thermal Resistance
V
DSS
= -55V
R
DS(on)
= 0.10
I
D
= -14A
8/25/97
S
D
G
l
Advanced Process Technology
l
Isolated Package
l
High Voltage Isolation = 2.5KVRMS
l
Sink to Lead Creepage Dist. = 4.8mm
l
P-Channel
l
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a low thermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
Parameter
Typ.
–––
–––
Max.
4.1
65
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
°C/W
TO-220 FULLPAK
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFI9Z34NPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRFIB41N15D | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRFIB41N15DPBF | 功能描述:MOSFET 150V SINGLE N-CH 45mOhms 72nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFIB5N50L | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| IRFIB5N50LPBF | 功能描述:MOSFET N-Chan 500V 4.7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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