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參數(shù)資料
| 型號(hào)： | IRFNG50 |
| 廠商： | International Rectifier |
| 英文描述： | POWER MOSFET N-CHANNEL(BVdss=1000V, Rds(on)=2.0ohm, Id=5.5A) |
| 中文描述： | 功率MOSFET N溝道（BVdss \u003d 1000V的的Rds（on）\u003d 2.0ohm，身份證\u003d 5.5A） |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 213K |
| 代理商： | IRFNG50 |
Thermal Resistance
Parameter
Junction-to-Case
Min. Typ. Max. Units
—
—
0.83
Test Conditions
RthJC
RthJPCB
Junction-to-PC Board
—
TBD
—
K/W
Soldered to a copper clad PC board
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min. Typ. Max. Units
—
—
—
—
Test Conditions
5.5
22
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.8
1200
8.4
V
ns
μ
C
T
j
= 25°C, IS = 5.5A, VGS = 0V
Tj = 25°C, IF = 5.5A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min.
1000
—
Typ. Max. Units
—
—
1.4
—
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
2.0
5.2
—
—
—
—
—
—
—
—
2.0
2.25
4.0
—
25
250
VGS = 10V, ID = 3.5A
VGS = 10V, ID = 5.5A
VDS = VGS, ID = 250
μ
A
VDS > 15V, IDS = 3.5A
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 5.5A
VDS = Max. Rating x 0.5
see figures 6 and 13
VDD = 500V, ID = 5.5A,
RG = 2.35
,
VGS = 10V
V
VGS(th)
gfs
IDSS
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
87
8.7
49
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.0
100
-100
200
20
110
30
44
210
60
—
see figure 10
Modified MOSFET
symbol showing the
internal inductances.
LS
Internal Source Inductance
—
6.5
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2400
240
80
—
—
—
VGS = 0V, VDS = 25V
f = 1.0 MHz
see figure 5
IRFNG50 Device
μ
A
nC
pF
nH
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
nA
A
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