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參數(shù)資料
| 型號： | IRFNG50 |
| 廠商： | International Rectifier |
| 英文描述： | POWER MOSFET N-CHANNEL(BVdss=1000V, Rds(on)=2.0ohm, Id=5.5A) |
| 中文描述： | 功率MOSFET N溝道（BVdss \u003d 1000V的的Rds（on）\u003d 2.0ohm，身份證\u003d 5.5A） |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 213K |
| 代理商： | IRFNG50 |
Case Outline and Dimensions — SMD-1
Repetitive Rating; Pulse width limited by
maximum junction temperature.
(see figure 11)
@ VDD = 50V, Starting TJ = 25°C,
EAS = [0.5 * L * (I
Peak IL = 5.5A, VGS = 10V, 25
≤
RG
≤
200
ISD
≤
5.5A, di/dt
≤
120A/
μ
s,
VDD
≤
BVDSS, TJ
≤
150°C
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
K/W = °C/W
W/K = W/°C
2
) * [BVDSS/(BVDSS-VDD)]
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http://www.irf.com/
Data and specifications subject to change without notice.
To Order
9/96
IRFNG50 Device
Fig. 13b — Basic Gate Charge Waveform
All dimensions in millimeters (inches)
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