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參數(shù)資料
| 型號： | IRHNA8Z60 |
| 廠商： | International Rectifier |
| 英文描述： | 30Volt, 0.009Ω, RAD HARD HEXFET(30V, 0.009Ω,抗輻射N溝道HEXFET晶體管) |
| 中文描述： | 30Volt，0.009Ω，RAD數(shù)據(jù)通信硬的HEXFET（30V的，0.009Ω，抗輻射?溝道的HEXFET晶體管） |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 127K |
| 代理商： | IRHNA8Z60 |
IRHNA7Z60, IRHNA8Z60 Devices
www.irf.com
7
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
12V
25
50
75
100
125
150
0
300
600
900
1200
1500
Starting T , Junction Temperature( C)
E
ID
34A
47A
75A
TOP
BOTTOM
Pre-Irradiation
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|---|---|
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