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參數(shù)資料
| 型號： | IRHNA8Z60 |
| 廠商： | International Rectifier |
| 英文描述： | 30Volt, 0.009Ω, RAD HARD HEXFET(30V, 0.009Ω,抗輻射N溝道HEXFET晶體管) |
| 中文描述： | 30Volt，0.009Ω，RAD數(shù)據(jù)通信硬的HEXFET（30V的，0.009Ω，抗輻射?溝道的HEXFET晶體管） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 127K |
| 代理商： | IRHNA8Z60 |
IRHNA7Z60, IRHNA8Z60 Devices
Pre-Irradiation
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
30
—
Typ
—
0.023
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
D
BVDSS/
D
TJ
V
V/°C
RDS(on)
—
—
0.009
VGS = 12V, ID =75A
VGS(th)
gfs
IDSS
2.0
31
—
—
—
—
—
—
4.0
—
25
250
V
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 75A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 75A
VDS = Max Rating x 0.5
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.8
100
-100
421
104
74
32
370
150
280
—
nC
VDD = 15V, ID = 75A,
RG = 2.35
W
LS
Internal Source Inductance
—
2.8
—
Ciss
Coss
Crss
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
7000
4800
1800
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
W
nH
ns
Measured fromdrain lead,
6mm(0.25 in) frompackage
to center of die.
Measured fromsource lead,
6mm(0.25 in) frompackage
to source bonding pad.
Modified MOSFET symbol show-
m
A
Min Typ
—
—
Max Units
75*
300
Test Conditions
—
—
Modified MOSFET symbol showing the integral
reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.8
245 ns Tj = 25°C, IF = 75A, di/dt
￡
100A/
m
s
1.1
m
C
V
T
j
= 25°C, IS = 75A, VGS = 0V
VDD
￡
50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
* Current is limited by internal wire diameter ( Die current is 75A , see page 6 )
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJ-PCB
Junction-to-PC board
Min Typ Max
—
—
—
1.6
Units
Test Conditions
0.42
— Soldered to a 1 inch square clad PC board
°C/W
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