參數(shù)資料
型號: IS42S81600A-7TLI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
中文描述: 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝: LEAD FREE, PLASTIC, TSOP2-54
文件頁數(shù): 15/65頁
文件大?。?/td> 556K
代理商: IS42S81600A-7TLI
ISSI
22
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
ADVANCEDINFORMATION
Rev. 00A
06/01/02
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
OPERATING FREQUENCY / LATENCY RELATIONSHIPS
SYMBOL
PARAMETER
-7
-10.
UNITS
Clock Cycle Time
7
10
ns
Operating Frequency
133
100
MHz
tCCD
READ/WRITE command to READ/WRITE command
1
cycle
tCKED
CKE to clock disable or power-down entry mode
1
cycle
tPED
CKE to clock enable or power-down exit setup mode
1
cycle
tDQD
DQM to input data delay
0
cycle
tDQM
DQM to data mask during WRITEs
0
cycle
tDQZ
DQM to data high-impedance during READs
2
cycle
tDWD
WRITE command to input data delay
0
cycle
tDAL
Data-in to ACTIVE command
5
4
cycle
tDPL
Data-in to PRECHARGE command
2
cycle
tBDL
Last data-in to burst STOP command
1
cycle
tCDL
Last data-in to new READ/WRITE command
1
cycle
tRDL
Last data-in to PRECHARGE command
2
cycle
tMRD
LOAD MODE REGISTER command
2
cycle
to ACTIVE or REFRESH command
tROH
Data-out to high-impedance from
CL = 3
3
cycle
PRECHARGE command
CL = 2
2
相關(guān)PDF資料
PDF描述
IDT71V433 32K x 32 3.3V Synchronous SRAM Flow-Through Outputs
IDT71V65602 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
IDT71V65602S-100BG 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
IDT71V65602S-100BGI 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
IDT71V35781 128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S81600AL-7TL 制造商:Integrated Silicon Solution Inc 功能描述:
IS42S81600B-6T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S81600B-6TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S81600B-7T 功能描述:動態(tài)隨機存取存儲器 128M 16Mx8 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S81600B-7TI 功能描述:動態(tài)隨機存取存儲器 128M 16Mx8 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube