參數(shù)資料
型號: IS42S81600A-7TLI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
中文描述: 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝: LEAD FREE, PLASTIC, TSOP2-54
文件頁數(shù): 2/65頁
文件大?。?/td> 556K
代理商: IS42S81600A-7TLI
ISSI
10
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
ADVANCEDINFORMATION
Rev. 00A
06/01/02
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
The extended mode register has four fields:
Options: A11-A7
Drive Strength: A6-A5
Temperature Compensated self Refresh: A4-A3
Partial Array Self Refresh: A2-A0
Following extended mode register programming, no com-
mand can be issued before at least 2 CLK have elapsed.
ACTIVE COMMAND
When the ACTIVE COMMAND is activated, BA0, BA1
inputs selects a bank to be accessed, and the address
inputs on A0-A11 selects the row. Until a PRECHARGE
command is issued to the bank, the row remains open for
accesses.
GENERAL DESCRIPTION Continued:
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IS42S81600AL-7TL 制造商:Integrated Silicon Solution Inc 功能描述:
IS42S81600B-6T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
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IS42S81600B-7TI 功能描述:動態(tài)隨機存取存儲器 128M 16Mx8 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube