參數(shù)資料
型號(hào)： IS42S81600A-7TLI
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
中文描述： 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝： LEAD FREE, PLASTIC, TSOP2-54
文件頁(yè)數(shù)： 6/65頁(yè)
文件大?。?/td> 556K
代理商： IS42S81600A-7TLI
ISSI
14
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
ADVANCEDINFORMATION
Rev. 00A
06/01/02
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
CS
RAS
RAS CAS
CAS
WE
Address
Command
Action
Read with auto
H
×
DESL
Continue burst to end -
Precharging
Precharge
L
H
x
NOP
Continue burst to end -
Precharging
L
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL (2)
L
H
L
BA, CA, A10
WRIT/ WRITA
ILLEGAL (2)
L
H
BA, RA
ACT
ILLEGAL (2)
L
H
L
BA, A10
PRE/PALL
ILLEGAL (2)
L
H
×
REF
ILLEGAL
L
OC, BA
MRS/EMRS
ILLEGAL
Write with Auto
H
×
DESL
Continue burst to end -Write
Precharge
recovering with auto precharge
L
H
×
NOP
Continue burst to end -Write
recoveringwith auto precharge
L
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL(2)
L
H
L
BA, CA, A10
WRIT/ WRITA
ILLEGAL (2)
L
H
BA, RA
L
H
L
BA, A10
PRE/PALL
ILLEGAL (2)
L
H
×
REF
ILLEGAL
L
OC, BA
MRS/EMRS
ILLEGAL
Precharging
H
×
DESL
Nop Enter idle after tRP
L
H
×
NOP
Nop Enter idle after tRP
L
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL (2)
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL (2)
L
H
BA, RA
ACT I
LLEGAL(2)
L
H
L
BA, A10
PRE/PALL
Nop Enter idle after tRP
L
H
×
REF
ILLEGAL
L
OC, BA
MRS/EMRS
ILLEGAL
Row Activating
H
×
DESL
Nop Enter bank active after tRCD
L
H
×
NOP
Nop Enter bank active after tRCD
L
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL (2)
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL (2)
L
H
BA, RA
ACT
ILLEGAL (2,8)
L
H
L
BA, A10
PRE/PALL
ILLEGAL (2)
L
H
×
REF
ILLEGAL
L
OC, BA
MRS/EMRS
ILLEGAL
FUNCTIONAL TRUTH TABLE Continued:
Note: H=VIH, L=VIL x= VIH or VIL, V = Valid Data, BA= Bank Address, CA+Column Address, RA=Row Address, OC= Op-Code
相關(guān)PDF資料
PDF描述
IDT71V433 32K x 32 3.3V Synchronous SRAM Flow-Through Outputs
IDT71V65602 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
IDT71V65602S-100BG 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
IDT71V65602S-100BGI 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
IDT71V35781 128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S81600AL-7TL 制造商:Integrated Silicon Solution Inc 功能描述:
IS42S81600B-6T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S81600B-6TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S81600B-7T 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 16Mx8 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S81600B-7TI 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 16Mx8 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*