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參數(shù)資料
| 型號： | IS64WV102416BLL-10TA3 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 1M X 16 STANDARD SRAM, 10 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP1-48 |
| 文件頁數(shù)： | 12/21頁 |
| 文件大?。?/td> | 134K |
| 代理商： | IS64WV102416BLL-10TA3 |
12
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
02/13/06
ISSI
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
-8
-10
Symbol
t
WC
t
SCE
t
AW
Parameter
Min.
Max.
Min.
Max.
Unit
Write Cycle Time
8
—
10
—
ns
CE
to Write End
6.5
—
8
—
ns
Address Setup Time
to Write End
6.5
—
8
—
ns
t
HA
t
SA
t
PWB
t
PWE
1
t
PWE
2
t
SD
t
HD
t
HZWE
(2)
t
LZWE
(2)
Address Hold from Write End
0
—
0
—
ns
Address Setup Time
0
—
0
—
ns
LB
,
UB
Valid to End of Write
6.5
—
8
—
ns
WE
Pulse Width
6.5
—
8
—
ns
WE
Pulse Width (
OE
= LOW)
8.0
—
10
—
ns
Data Setup to Write End
5
—
6
—
ns
Data Hold from Write End
0
—
0
—
ns
WE
LOW to High-Z Output
—
3.5
—
5
ns
WE
HIGH to Low-Z Output
2
—
2
—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or ess, timing reference evels of 1.5V, nput pulse evels of 0V to 3.0V and output oading
specified n Figure 1.
2. Tested with the oad n Figure 2. Transition s measured ±500 mV from steady-state voltage. Not 100% tested.
3. The nternal write time s defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be n valid states to nitiate a Write, but any
one can go nactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that
terminates the write. Shaded area product n development
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| IS64WV102416BLL-10TA3-TR | 功能描述:靜態(tài)隨機存取存儲器 16M (1Mx16) 10ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64WV102416BLL-10TLA3 | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS64WV10248BLL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS64WV10248BLL-10CTLA3 | 功能描述:靜態(tài)隨機存取存儲器 8M (1Mx8) 10ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64WV10248BLL-10CTLA3-TR | 功能描述:靜態(tài)隨機存取存儲器 8M (1Mx8) 10ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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