參數資料
型號: IS64WV102416BLL-10TA3
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
中文描述: 1M X 16 STANDARD SRAM, 10 ns, PDSO48
封裝: 12 X 20 MM, TSOP1-48
文件頁數: 4/21頁
文件大?。?/td> 134K
代理商: IS64WV102416BLL-10TA3
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
02/13/06
ISSI
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
V
DD
T
STG
P
T
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Terminal Voltage with Respect to GND
V
DD
Relates to GND
Storage Temperature
Power Dissipation
Value
Unit
V
V
°C
W
–0.5 to V
DD
+ 0.5
–0.3 to 4.0
–65 to +150
1.0
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
I/O
Input/Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 3.3V.
TRUTH TABLE
I/O PIN
Mode
WE
CE
OE
LB
UB
I/O0-I/O7
I/O8-I/O15
V
DD
Current
Not Selected
X
H
X
X
X
High-Z
High-Z
I
SB
1
, I
SB
2
Output Disabled
H
X
L
L
H
X
X
H
X
H
High-Z
High-Z
High-Z
High-Z
I
CC
Read
H
H
H
L
L
L
L
L
L
L
H
L
H
L
L
D
OUT
High-Z
D
OUT
High-Z
D
OUT
D
OUT
I
CC
Write
L
L
L
L
L
L
X
X
X
L
H
L
H
L
L
D
IN
High-Z
D
IN
D
IN
I
CC
High-Z
D
IN
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