參數資料
型號: IS64WV102416BLL-10TA3
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
中文描述: 1M X 16 STANDARD SRAM, 10 ns, PDSO48
封裝: 12 X 20 MM, TSOP1-48
文件頁數: 8/21頁
文件大?。?/td> 134K
代理商: IS64WV102416BLL-10TA3
8
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
02/13/06
ISSI
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-8
-10
-20
Symbol
Parameter
Test Conditions
Min.
Max.
Min.
Max.
Min.
Max.
Unit
I
CC
V
DD
Dynamic Operating
Supply Current
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
V
IN
= 0.4V or V
DD
–0.3V
Com.
Ind.
Auto.
typ.
(2)
120
125
95
100
140
90
100
140
mA
60
I
CC
1
Operating
Supply Current
V
DD
= Max.,
I
OUT
= 0 mA, f = 0
V
IN
= 0.4V or V
DD
–0.3V
Com.
Ind.
Auto.
35
35
30
40
70
30
40
70
mA
I
SB
1
TTL Standby Current
(TTL Inputs)
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = 0
Com.
Ind.
Auto.
30
35
30
35
70
30
35
70
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
V
DD
= Max.,
CE
V
DD
– 0.2V,
V
IN
V
DD
– 0.2V, or
V
IN
0.2V
, f = 0
Com.
Ind.
Auto.
typ.
(2)
20
25
20
25
70
20
25
70
mA
4
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
= 3.0V, T
A
= 25
o
C and not 100% tested.
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