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參數(shù)資料
| 型號： | IS64WV20488BLL-10TA3 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 2M x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 2M X 8 STANDARD SRAM, 10 ns, PDSO44 |
| 封裝： | 0.400 INCH, TSOP2-44 |
| 文件頁數(shù)： | 12/20頁 |
| 文件大小： | 126K |
| 代理商： | IS64WV20488BLL-10TA3 |
12
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00C
01/09/06
ISSI
IS61WV20488ALL
IS61WV20488BLL
IS64WV20488BLL
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,2)
(Over Operating Range)
-20 ns
Min.
Symbol
t
WC
t
SCE
t
AW
Parameter
Max.
Unit
Write Cycle Time
20
—
ns
CE
to Write End
12
—
ns
Address Setup Time
to Write End
12
—
ns
t
HA
t
SA
t
PWE
1
t
PWE
2
t
SD
t
HD
t
HZWE
(3)
t
LZWE
(3)
Address Hold from Write End
0
—
ns
Address Setup Time
0
—
ns
WE
Pulse Width (
OE
= HIGH)
12
—
ns
WE
Pulse Width (
OE
= LOW)
17
—
ns
Data Setup to Write End
9
—
ns
Data Hold from Write End
0
—
ns
WE
LOW to High-Z Output
—
9
ns
WE
HIGH to Low-Z Output
3
—
ns
Notes:
1. Test conditions assume signal transition times of 1.5ns or less, timing reference levels of 1.25V,
input pulse levels of 0.4V to V
DD
-0.3V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not
100% tested.
3. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in
valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input
Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the
write.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS64WV25616BLL/BLS | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM |
| IS64WV25616BLL-10BLA3 | 功能描述:靜態(tài)隨機存取存儲器 4Mb, 256Kx16, 8ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64WV25616BLL-10BLA3-TR | 功能描述:靜態(tài)隨機存取存儲器 4Mb, 256Kx16, 8ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64WV25616BLL-10CTLA3 | 功能描述:靜態(tài)隨機存取存儲器 4M (256Kx16) 10ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64WV25616BLL-10CTLA3-TR | 功能描述:靜態(tài)隨機存取存儲器 4M (256Kx16) 10ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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