參數(shù)資料
型號(hào): IS64WV20488BLL-10TA3
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 2M x 8 HIGH-SPEED CMOS STATIC RAM
中文描述: 2M X 8 STANDARD SRAM, 10 ns, PDSO44
封裝: 0.400 INCH, TSOP2-44
文件頁(yè)數(shù): 14/20頁(yè)
文件大?。?/td> 126K
代理商: IS64WV20488BLL-10TA3
14
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00C
01/09/06
ISSI
IS61WV20488ALL
IS61WV20488BLL
IS64WV20488BLL
DATA UNDEFINED
LOW
t
WC
VALID ADDRESS
t
PWE1
t
AW
t
HA
HIGH-Z
t
HD
t
SA
t
HZWE
ADDRESS
CE
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
CE_WR2.eps
Notes:
1. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write, but
any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of
the signal that terminates the Write.
2. I/O will assume the High-Z state if
OE
> V
IH
.
AC WAVEFORMS
WRITE CYCLE NO. 2
(1,2)
(
WE
Controlled:
OE
is HIGH During Write Cycle)
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