參數(shù)資料
型號: ISP1161BD
廠商: NXP SEMICONDUCTORS
元件分類: 總線控制器
英文描述: Full-speed Universal Serial Bus single-chip host and device controller
中文描述: UNIVERSAL SERIAL BUS CONTROLLER, PQFP64
封裝: 10 X 10 MM, 1.40 MM HEIGHT, PLASTIC, MS-026, SOT-314-2, LQFP-64
文件頁數(shù): 38/127頁
文件大?。?/td> 2762K
代理商: ISP1161BD
Philips Semiconductors
ISP1161
Full-speed USB single-chip host and device controller
Product data
Rev. 01 — 3 July 2001
38 of 130
9397 750 08313
Philips Electronics N.V. 2001. All rights reserved.
9.8.1
Using internal OC detection circuit
The internal OC detection circuit can be used only when V
CC
(pin 56) is connected to
a +5 V power supply. The HC Driver must set AnalogOCEnable, bit 10 of the
HcHardwareConfiguration register, to logic 1.
An application using the internal OC detection circuit and internal 15 k
pull-down
resistors is shown in
Figure 35
, where H_DMn denotes either pin H_DM1 or H_DM2,
while H_DPn denotes either pin H_DP1 or H_DP2. In this example, the HC Driver
must set both AnalogOCEnable and the DownstreamPort15KresistorSel to logic 1.
They are bit 10 and bit 12 of the HcHardwareConfiguration register, respectively.
When H_OCn detects an overcurrent status on a downstream port, H_PSWn will
output HIGH, a logic 1 to turn off the +5 V power supply to the downstream port V
BUS
.
When there is no such detection, H_PSWn will output LOW, a logic 0 to turn on the
+5 V power supply to the downstream port V
BUS
.
In general applications, we can use a P-channel MOSFET (such as PHP109) as the
power switch for V
BUS
. Connect the +5 V power supply to the drain pole of the
P-channel MOSFET, V
BUS
to the source pole, and H_PSWn to the gate pole. We call
the voltage drop (
V) across the drain and source poles the overcurrent trip voltage.
For the internal overcurrent detection circuit, a voltage comparator has been
designed-in, with a nominal voltage threshold of 75 mV. Therefore, when the
overcurrent trip voltage (
V) exceeds the voltage threshold, H_PSWn will output a
HIGH level, logic 1 to turn off the P-channel MOSFET. If the P-channel MOSFET has
a R
DSon
of 150 m
, the overcurrent threshold will be 500 mA. The selection of a
P-channel MOSFET with a different R
DSon
will result in a different overcurrent
threshold.
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