- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄224103 > K4E640411D-TC500 16M X 4 EDO DRAM, 50 ns, PDSO32 PDF資料下載
參數(shù)資料
| 型號： | K4E640411D-TC500 |
| 元件分類： | DRAM |
| 英文描述： | 16M X 4 EDO DRAM, 50 ns, PDSO32 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-32 |
| 文件頁數(shù)： | 15/21頁 |
| 文件大?。?/td> | 407K |
| 代理商： | K4E640411D-TC500 |
CMOS DRAM
K4E660411D, K4E640411D
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Parameter
Symbol
Rating
Units
Voltage on any pin relative to VSS
VIN,VOUT
-1.0 to +7.0
V
Voltage on VCC supply relative to VSS
VCC
-1.0 to +7.0
V
Storage Temperature
Tstg
-55 to +150
°C
Power Dissipation
PD
1
W
Short Circuit Output Current
IOS Address
50
mA
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70
°C)
*1 : VCC+2.0V at pulse width
≤20ns which is measured at VCC
*2 : -2.0 at pulse width
≤20ns which is measured at VSS
Parameter
Symbol
Min
Typ
Max
Units
Supply Voltage
VCC
4.5
5.0
5.5
V
Ground
VSS
0
V
Input High Voltage
VIH
2.6
-
VCC+1.0*1
V
Input Low Voltage
VIL
-1.0*2
-
0.7
V
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)
Parameter
Symbol
Min
Max
Units
Input Leakage Current (Any input 0
≤VIN≤VCC+0.5V,
all other pins not under test=0 Volt)
II(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤VOUT≤VCC)
IO(L)
-5
5
uA
Output High Voltage Level(IOH=-5mA)
VOH
2.4
-
V
Output Low Voltage Level(IOL=4.2mA)
VOL
-
0.4
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4F640411C-TC500 | 16M X 4 FAST PAGE DRAM, 50 ns, PDSO32 |
| K4F640412C-JC450 | 16M X 4 FAST PAGE DRAM, 45 ns, PDSO32 |
| K4T1G044QC-ZCLE6 | 256M X 4 DDR DRAM, 0.45 ns, PBGA60 |
| K4T56163QI-ZLD50 | 16M X 16 SYNCHRONOUS DRAM, 0.5 ns, PBGA84 |
| K5A3240YT | Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4E640411D-TC60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412C-TL50 | 制造商:Samsung Semiconductor 功能描述:CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
| K4E640412C-TL60 | 制造商:Samsung Semiconductor 功能描述:CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
| K4E640412D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412D-TC50 | 制造商:Samsung Semiconductor 功能描述:DRAM Chip EDO 64M-Bit 16Mx4 3.3V 32-Pin TSOP-II |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。