參數(shù)資料
型號: K4H560838E-ZCB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: CAP, 10NF 1KV 10%, SMT, 1812
中文描述: 256Mb的電子芯片與DDR SDRAM的規(guī)格鉛60 FBGA封裝,免費(符合RoHS)
文件頁數(shù): 11/19頁
文件大?。?/td> 171K
代理商: K4H560838E-ZCB0
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Rev. 1.1 August. 2003
DDR SDRAM I
DD
spec table
(V
DD
=2.7V, T = 10
°
C)
Symbol
32Mx8
Unit
Notes
- CC(DDR400@CL=3)
105
130
4
30
25
55
75
185
220
200
3
1.5
350
- C4(DDR400@CL=3)
100
130
4
30
25
55
75
185
220
200
3
1.5
350
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
IDD6
Normal
Low power
IDD7A
Optional
Symbol
16Mx16
Unit
Notes
- CC(DDR400@CL=3)
110
150
4
30
25
55
75
220
250
200
3
1.5
380
- C4(DDR400@CL=3)
105
145
4
30
25
55
75
220
250
200
3
1.5
380
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
IDD6
Normal
Low power
IDD7A
Optional
相關(guān)PDF資料
PDF描述
K4H560838E-ZCB3 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
K4H560838E-GLB0 DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL
K4H560838E-GLB3 DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL
K4H560838M-TCA0 128Mb DDR SDRAM
K4H560838E-ULA2 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H560838E-ZCB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
K4H560838E-ZLA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
K4H560838E-ZLB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
K4H560838E-ZLB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
K4H560838F-TC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb F-die DDR400 SDRAM Specification