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參數(shù)資料
| 型號： | K4H560838E-ZCB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CAP, 10NF 1KV 10%, SMT, 1812 |
| 中文描述： | 256Mb的電子芯片與DDR SDRAM的規(guī)格鉛60 FBGA封裝，免費（符合RoHS） |
| 文件頁數(shù)： | 3/19頁 |
| 文件大?。?/td> | 171K |
| 代理商： | K4H560838E-ZCB0 |
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Rev. 1.1 August. 2003
200MHz Clock, 400Mbps data rate.
VDD= +2.6V + 0.10V, VDDQ= +2.6V + 0.10V
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Four banks operation
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
MRS cycle with address key programs
-. Read latency 3 (clock) for DDR400 , 2.5 (clock) for DDR333
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
Data I/O transactions on both edges of data strobe
Edge aligned data output, center aligned data input
LDM,UDM for write masking only (x16)
Auto & Self refresh
7.8us refresh interval(8K/64ms refresh)
Maximum burst refresh cycle : 8
66pin TSOP II package
Ordering Information
Part No.
Org.
Max Freq.
Interface
Package
K4H560838F-TCCC
32M x 8
CC(DDR400@CL=3)
SSTL2
66pin TSOP II
K4H560838F-TCC4
C4(DDR400@CL=3)
K4H561638F-TCCC
16M x 16
CC(DDR400@CL=3)
SSTL2
66pin TSOP II
K4H561638F-TCC4
C4(DDR400@CL=3)
Key Features
*CL : CAS Latency
Operating Frequencies
- CC(DDR400@CL=3)
200MHz
3 - 3 - 3
- C4(DDR400@CL=3)
200MHz
3 - 4 - 4
Speed @CL3
CL-tRCD-tRP
相關PDF資料 |
PDF描述 |
|---|---|
| K4H560838E-ZCB3 | 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560838E-GLB0 | DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL |
| K4H560838E-GLB3 | DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL |
| K4H560838M-TCA0 | 128Mb DDR SDRAM |
| K4H560838E-ULA2 | 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4H560838E-ZCB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560838E-ZLA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560838E-ZLB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560838E-ZLB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560838F-TC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb F-die DDR400 SDRAM Specification |
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