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參數(shù)資料
| 型號： | K4H560838E-ZCB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CAP, 10NF 1KV 10%, SMT, 1812 |
| 中文描述： | 256Mb的電子芯片與DDR SDRAM的規(guī)格鉛60 FBGA封裝，免費（符合RoHS） |
| 文件頁數(shù)： | 5/19頁 |
| 文件大?。?/td> | 171K |
| 代理商： | K4H560838E-ZCB0 |
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Rev. 1.1 August. 2003
Units : Millimeters
0.30
±
0.08
0.65TYP
0.65
±
0.08
(0.71)
22.22
±
0.10
0.125
(
1
±
0
0
×
~8
×
#1
#33
#66
#34
(1.50)
(
1
±
0
1
(
(
(
1
±
0
(10
×
)
(10
×
)
-0.035
(
0.10 MAX
0.075 MAX
[
]
0
(10
×
)
(10
×
)
(R015)
0
±
0
0
±
0
(R015
(
×
)
(02)
(R025
0
0.25TYP
NOTE
1. ( ) IS REFERENCE
2. [ ] IS ASS
’
Y OUT QUALITY
66pin TSOPII / Package dimension
Package Physical Demension
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H560838E-ZCB3 | 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560838E-GLB0 | DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL |
| K4H560838E-GLB3 | DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL |
| K4H560838M-TCA0 | 128Mb DDR SDRAM |
| K4H560838E-ULA2 | 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H560838E-ZCB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560838E-ZLA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560838E-ZLB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560838E-ZLB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560838F-TC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb F-die DDR400 SDRAM Specification |
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