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參數(shù)資料
| 型號： | K4T56163QI-ZLD50 |
| 元件分類： | DRAM |
| 英文描述： | 16M X 16 SYNCHRONOUS DRAM, 0.5 ns, PBGA84 |
| 封裝： | ROHS COMPLIANT, FBGA-84 |
| 文件頁數(shù)： | 10/42頁 |
| 文件大?。?/td> | 727K |
| 代理商： | K4T56163QI-ZLD50 |
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Rev. 1.0 October 2007
DDR2 SDRAM
K4T56163QI
18 of 42
Parameter
Symbol
DDR2-800
DDR2-667
DDR2-533
DDR2-400
Units
Notes
min
max
min
max
min
max
min
max
Four Activate Window for 1KB page size products tFAW
35
37.5
ns
Four Activate Window for 2KB page size products tFAW
45
50
ns
CAS to CAS command delay
tCCD
2
x
2
tCK
Write recovery time
tWR
15
x
15
x15
x
15
x
ns
Auto precharge write recovery + precharge time
tDAL
WR+tRP
x
WR+tRP
x
WR+tRP
x
WR+tRP
x
tCK
23
Internal write to read command delay
tWTR
7.5
x7.5
x10
x
ns
33
Internal read to precharge command delay
tRTP
7.5
ns
11
Exit self refresh to a non-read command
tXSNR
tRFC + 10
ns
Exit self refresh to a read command
tXSRD
200
x200
200
tCK
Exit precharge power down to any non-read com-
mand
tXP
2
x
2
x
2
x
2
x
tCK
Exit active power down to read command
tXARD
2
x
2
x
2
x
2
x
tCK
9
Exit active power down to read command
(slow exit, lower power)
tXARDS
8 - AL
7 - AL
6 - AL
tCK
9, 10
CKE minimum pulse width
(high and low pulse width)
tCKE
3
33
tCK
36
ODT turn-on delay
tAOND
22
2
tCK
ODT turn-on
tAON
tAC(min)
tAC(max)
+ 0.7
tAC(min)
tAC(max)
+0.7
tAC(min)
tAC(max)
+1
tAC(min)
tAC(max)
+1
ns
13, 25
ODT turn-on(Power-Down mode)
tAONPD
tAC(min)+
2
2tCK +
tAC(max)
+1
tAC(min)+
2
2tCK+tAC
(max)+1
tAC(min)+
2
2tCK+tA
C(max)+
1
tAC(min)+
2
2tCK+tAC
(max)+1
ns
ODT turn-off delay
tAOFD
2.5
tCK
ODT turn-off
tAOF
tAC(min)
tAC(max)
+ 0.6
tAC(min)
tAC(max)
+ 0.6
tAC(min)
tAC(max)
+ 0.6
tAC(min)
tAC(max)
+ 0.6
ns
26
ODT turn-off (Power-Down mode)
tAOFPD
tAC(min)+
2
2.5tCK +
tAC(max)
+1
tAC(min)+
2
2.5tCK+t
AC(max)
+1
tAC(min)+
2
2.5tCK+
tAC(max)
+1
tAC(min)+
2
2.5tCK+
tAC(max)
+1
ns
ODT to power down entry latency
tANPD
3
tCK
ODT power down exit latency
tAXPD
8
tCK
OCD drive mode output delay
tOIT
0
12
0
12
0
12
0
12
ns
Minimum time clocks remains ON after CKE asyn-
chronously drops LOW
tDelay
tIS+tCK
+tIH
tIS+tCK
+tIH
tIS+tCK
+tIH
tIS+tCK
+tIH
ns
24
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4T56163QN | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Consumer Memory |
| K4T56163QN-HCE6000 | 制造商:Samsung SDI 功能描述:DRAM Chip DDR2 SDRAM 256M-Bit 16Mx16 1.8V 84-Pin FBGA Tray |
| K4T56163QN-HCE6T00 | 制造商:Samsung SDI 功能描述: |
| K4T56163QN-ZCE6T00 | 制造商:Samsung 功能描述:256 SDRAM X16 - Tape and Reel |
| K4T56163QN-ZCE7000 | 制造商:Samsung 功能描述:DDR2 SDRAM 32MX16 47H32M16 PBF FBGA 1.8V PLASTIC 512M - Trays |
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