參數(shù)資料
型號(hào)： K9E2G08U0M-V
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256M x 8 Bits NAND Flash Memory
中文描述： 256M x 8位NAND閃存
文件頁(yè)數(shù)： 15/38頁(yè)
文件大?。?/td> 888K
代理商： K9E2G08U0M-V
FLASH MEMORY
15
K9E2G08U0M
Preliminary
Samsung NAND Flash has three address pointer commands as a substitute for the two most significant column addresses. ’00h’
command sets the pointer to ’A’ area(0~255byte), ’01h’ command sets the pointer to ’B’ area(256~511byte), and ’50h’ command sets
the pointer to ’C’ area(512~527byte). With these commands, the starting column address can be set to any of a whole
page(0~527byte). ’00h’ or ’50h’ is sustained until another address pointer command is inputted. ’01h’ command, however, is effective
only for one operation. After any operation of Read, Program, Erase, Reset, Power_Up is executed once with ’01h’ command, the
address pointer returns to ’A’ area by itself. To program data starting from ’A’ or ’C’ area, ’00h’ or ’50h’ command must be inputted
before ’80h’ command is written. A complete read operation prior to ’80h’ command is not necessary. To program data starting from
’B’ area, ’01h’ command must be inputted right before ’80h’ command is written.
00h
(1) Command input sequence for programming ’A’ area
Address / Data input
80h
10h
00h
80h
10h
Address / Data input
The address pointer is set to ’A’ area(0~255), and sustained
01h
(2) Command input sequence for programming ’B’ area
Address / Data input
80h
10h
01h
80h
10h
Address / Data input
’B’, ’C’ area can be programmed.
It depends on how many data are inputted.
’01h’ command must be rewritten before
every program operation
The address pointer is set to ’B’ area(256~511), and will be reset to
’A’ area after every program operation is executed.
50h
(3) Command input sequence for programming ’C’ area
Address / Data input
80h
10h
50h
80h
10h
Address / Data input
Only ’C’ area can be programmed.
’50h’ command can be omitted.
The address pointer is set to ’C’ area(512~527), and sustained
’00h’ command can be omitted.
It depends on how many data are inputted.
’A’,’B’,’C’ area can be programmed.
Pointer Operation of K9E2G08U0M
Table 2. Destination of the pointer
Command
Pointer position
Area
00h
01h
50h
0 ~ 255 byte
256 ~ 511 byte
512 ~ 527 byte
1st half array(A)
2nd half array(B)
spare array(C)
"A" area
(00h plane)
256 Bytes
"B" area
(01h plane)
"C" area
(50h plane)
256 Bytes
16 Bytes
"A"
"B"
"C"
Internal
Page Register
Pointer select
commnad
(00h, 01h, 50h)
Pointer
Figure 5. Block Diagram of Pointer Operation
相關(guān)PDF資料
PDF描述
K9E2G08U0M-Y 256M x 8 Bits NAND Flash Memory
K9E2G08U0M-F 256M x 8 Bits NAND Flash Memory
K9E2G08U0M-P 256M x 8 Bits NAND Flash Memory
K9F1208D0A 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9E2G08U0M-Y 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bits NAND Flash Memory
K9F1208B0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9F1208B0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bits NAND Flash Memory
K9F1208B0C-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9F1208D0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
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