參數(shù)資料
型號(hào)： K9E2G08U0M-V
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256M x 8 Bits NAND Flash Memory
中文描述： 256M x 8位NAND閃存
文件頁(yè)數(shù)： 9/38頁(yè)
文件大?。?/td> 888K
代理商： K9E2G08U0M-V
FLASH MEMORY
9
K9E2G08U0M
Preliminary
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
Notes :
1. Typical values are measured at Vcc=3.3V, T
A
=25
°
C. And not 100% tested.
Paramete
Symbol
Test Conditions
Min
Typ
Max
Unit
Operating
Current
Sequential Read
I
CC
1
tRC=50ns, CE=V
IL,
I
OUT
=0mA
-
15
30
mA
Program
I
CC
2
-
-
15
30
Erase
I
CC
3
-
-
15
30
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=0V/V
CC
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2, WP=0V/V
CC
-
20
100
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±
20
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
±
20
Input High Voltage
V
IH
I/O pins
2.0
-
V
CCQ
+0.3
V
Except I/O pins
2.0
-
V
CC
+0.3
Input Low Voltage, All inputs
V
IL
-
-0.3
-
0.8
Output High Voltage Level
V
OH
I
OH
=-400
μ
A
2.4
-
-
Output Low Voltage Level
V
OL
I
OL
=2.1mA
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
V
OL
=0.4V
8
10
-
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND at the condision of K9E2G08U0M-XCB0
:
T
A
=0 to 70
°
C or K9E2G08U0M-XIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
V
CC
2.7
3.3
3.6
V
V
CCQ
2.7
3.3
3.6
V
V
SS
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to VSS
V
IN/OUT
-0.6 to +4.6
V
V
CC/
V
CCQ
-0.6 to +4.6
Temperature Under Bias
K9E2G08U0M-XCB0
T
BIAS
-10 to +125
°
C
K9E2G08U0M-XIB0
-40 to +125
Storage Temperature
T
STG
-65 to +150
°
C
Short Circuit Current
I
OS
5
mA
相關(guān)PDF資料
PDF描述
K9E2G08U0M-Y 256M x 8 Bits NAND Flash Memory
K9E2G08U0M-F 256M x 8 Bits NAND Flash Memory
K9E2G08U0M-P 256M x 8 Bits NAND Flash Memory
K9F1208D0A 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9F1208D0A-P TV 128C 128#22D PIN RECP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9E2G08U0M-Y 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bits NAND Flash Memory
K9F1208B0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9F1208B0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bits NAND Flash Memory
K9F1208B0C-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9F1208D0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
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