參數(shù)資料
型號(hào)： K9E2G08U0M-V
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256M x 8 Bits NAND Flash Memory
中文描述： 256M x 8位NAND閃存
文件頁數(shù)： 16/38頁
文件大?。?/td> 888K
代理商： K9E2G08U0M-V
FLASH MEMORY
16
K9E2G08U0M
Preliminary
System Interface Using CE don’t-care.
CE
WE
t
WP
t
CH
t
CS
Start Add.(4Cycle)
80h
Data Input
CE
CLE
ALE
WE
I/O
X
Data Input
CE don’t-care
≈
≈
10h
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528bytes page registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and read-
ing would provide significant savings in power consumption.
Start Add.(4Cycle)
00h
CE
CLE
ALE
WE
I/O
X
Data Output(sequential)
CE don’t-care
≈
R/B
t
R
RE
t
CEA
out
t
REA
CE
RE
I/O
X
Figure 6. Program Operation with CE don’t-care.
Figure 7. Read Operation with CE don’t-care.
CE must be held
low during tR
相關(guān)PDF資料
PDF描述
K9E2G08U0M-Y 256M x 8 Bits NAND Flash Memory
K9E2G08U0M-F 256M x 8 Bits NAND Flash Memory
K9E2G08U0M-P 256M x 8 Bits NAND Flash Memory
K9F1208D0A 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9F1208D0A-P TV 128C 128#22D PIN RECP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9E2G08U0M-Y 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bits NAND Flash Memory
K9F1208B0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9F1208B0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bits NAND Flash Memory
K9F1208B0C-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9F1208D0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
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