參數(shù)資料
型號(hào): K9F1208R0B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: TV 99C 97#22D 2#8(TWINAX) SKT
中文描述: 6400 × 8位NAND閃存
文件頁(yè)數(shù): 14/45頁(yè)
文件大?。?/td> 1029K
代理商: K9F1208R0B
FLASH MEMORY
14
K9F1208B0B
K9F1208U0B
K9F1208R0B
Preliminary
AC TIMING CHARACTERISTICS FOR COMMAND / ADDRESS / DATA INPUT
NOTE
: 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
2. TBD means "To Be Determinded".
Parameter
Symbol
Min
Max
Unit
1.8V
2.7V
3.3V
1.8V
2.7V
3.3V
CLE setup Time
t
CLS
0
0
0
-
-
-
ns
CLE Hold Time
t
CLH
10
10
10
-
-
-
ns
CE setup Time
t
CS
0
0
0
-
-
-
ns
CE Hold Time
t
CH
10
10
10
-
-
-
ns
WE Pulse Width
t
WP
(1)
40
25
25
-
-
-
ns
ALE setup Time
t
ALS
0
0
0
-
-
-
ns
ALE Hold Time
t
ALH
10
10
10
-
-
-
ns
Data setup Time
t
DS
20
20
20
-
-
-
ns
Data Hold Time
t
DH
10
10
10
-
-
-
ns
Write Cycle Time
t
WC
60
45
45
-
-
-
ns
WE High Hold Time
t
WH
20
15
15
-
-
-
ns
PROGRAM / ERASE CHARACTERISTICS
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
(1)
-
200
500
μ
s
Dummy Busy Time for Multi Plane Program
t
DBSY
1
10
μ
s
Number of Partial Program Cycles
in the Same Page
Main Array
Nop
-
-
1
cycle
Spare Array
-
-
2
cycles
Block Erase Time
t
BERS
-
2
3
ms
NOTE
: 1.Typical program time is defined as the time within more than 50% of the whole pages are programmed at Vcc of 3.3V and 25’C
相關(guān)PDF資料
PDF描述
K9F1208B0B 64M x 8 Bit NAND Flash Memory
K9F1208U0 64M x 8 Bit NAND Flash Memory
K9F1208U0M-YIB0 64M x 8 Bit NAND Flash Memory
K9F1208U0M-YCB0 64M x 8 Bit NAND Flash Memory
K9F1208U0M- 64M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1208R0C 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:三星公司新版本NAND FLASH
K9F1208R0C-J 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY
K9F1208R0C-JIB0000 制造商:Samsung SDI 功能描述:
K9F1208U0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208U0A 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory