參數(shù)資料
型號(hào): K9F1208R0B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: TV 99C 97#22D 2#8(TWINAX) SKT
中文描述: 6400 × 8位NAND閃存
文件頁(yè)數(shù): 32/45頁(yè)
文件大小: 1029K
代理商: K9F1208R0B
FLASH MEMORY
32
K9F1208B0B
K9F1208U0B
K9F1208R0B
Preliminary
Figure 7. Read1 Operation
Start Add.(4Cycle)
00h
Data Output(Sequential)
CE
CLE
ALE
R/B
WE
I/O
0
~
7
RE
t
R
On K9F1208U0B-Y,P or K9F1208U0B-V,F
CE must be held low during tR
A
0
~ A
7
& A
9
~ A
25
(00h Command)
Data Field
Spare Field
Main array
(01h Command)
Data Field
Spare Field
1st half array
2st half array
NOTE
: 1) After data access on 2nd half array by 01h command, the start pointer is automatically moved to 1st half
array (00h) at next cycle.
1)
相關(guān)PDF資料
PDF描述
K9F1208B0B 64M x 8 Bit NAND Flash Memory
K9F1208U0 64M x 8 Bit NAND Flash Memory
K9F1208U0M-YIB0 64M x 8 Bit NAND Flash Memory
K9F1208U0M-YCB0 64M x 8 Bit NAND Flash Memory
K9F1208U0M- 64M x 8 Bit NAND Flash Memory
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K9F1208R0C-J 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9F1208R0C-JIB0000 制造商:Samsung SDI 功能描述:
K9F1208U0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
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