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參數(shù)資料
| 型號： | KM4132G512 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K x 32Bit x 2 Banks Synchronous Graphic RAM(256K x 32位 x 2組同步圖形 RAM) |
| 中文描述： | 256 × 32Bit的× 2銀行同步圖形存儲器（256K × 32位× 2組同步圖形RAM）的 |
| 文件頁數(shù)： | 2/49頁 |
| 文件大?。?/td> | 934K |
| 代理商： | KM4132G512 |
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KM4132G512
CMOS SGRAM
- 3 -
Rev. 2.2 (June 1998)
The KM4132G512 is 16,777,216 bits synchronous high data
rate Dynamic RAM organized as 2 x 262,144 words by 32 bits,
fabricated with SAMSUNG
′
s high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock. I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst length, and programmable latencies allows the same
device to be useful for a variety of high bandwidth, high perfor-
mance memory system applications.
Write per bit and 8 columns block write improves performance in
graphics systems.
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Dual bank / Pulse RAS
MRS cycle with address key programs
-. CAS Latency (2, 3)
-. Burst Length (1, 2, 4, 8 & full page)
-. Burst Type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the
system clock
Burst Read Single-bit Write operation
DQM 0-3 for byte masking
Auto & self refresh
32ms refresh period (2K cycle)
100 Pin PQFP, TQFP (14 x 20 mm)
Graphics Features
SMRS cycle.
-. Load mask register
-. Load color register
Write Per Bit(Old Mask)
Block Write(8 Columns)
GENERAL DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
256K x 32Bit x 2 Banks Synchronous Graphic RAM
T
CLK
CKE
CS
RAS
CAS
WE
DSF
DQMi
BLOCK
WRITE
CONTROL
LOGIC
DQi
P
R
L
B
256Kx32
CELL
ARRAY
256Kx32
CELL
ARRAY
SERIAL
COUNTER
COLUMN ADDRESS
BUFFER
ROW DECORDER
BANK SELECTION
ADDRESS REGISTER
REFRESH
COUNTER
ROW ADDRESS
BUFFER
I
MASK
REGISTER
COLOR
REGISTER
MUX
WRITE
CONTROL
LOGIC
M
C
D
S
A
COLUMN
MASK
(i=0~31)
DQMi
CLOCK
ADDRESS(A
0
~A
10
)
DQMi
O
ORDERING INFORMATION
*
KM4132G512-G* ; Low Power version
Part NO.
Max Freq. Interface
166MHz
143MHz
125MHz
100MHz
166MHz
143MHz
125MHz
100MHz
Package
KM4132G512Q-6/
G6
KM4132G512Q-7/
G7
KM4132G512Q-8/
G8
KM4132G512Q-10/
G0
KM4132G512TQ-6/
G6
KM4132G512TQ-7/
G7
KM4132G512TQ-8/
G8
KM4132G512TQ-10/
G0
LVTTL
100 PQFP
LVTTL
100 TQFP
相關(guān)PDF資料 |
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| KM416V1000B | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V1200B | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C1200C | 12.4K OHM 1% 1/2W M/F LEADED RESISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM4132G51207 | 制造商:SAMSUNG 功能描述:New |
| KM4132G512Q-10 | 制造商:SEC 功能描述:SGRAM, 2X256KX32, 100 Pin, Plastic, QFP |
| KM4132G512Q-8T | 制造商:Samsung SDI 功能描述: |
| KM4132G512TQ-10 | 制造商:Samsung Electro-Mechanics 功能描述:512K X 32 SYNCHRONOUS GRAPHICS RAM, 7 ns, PQFP100 |
| KM41464A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K X 4 BIT DYNAMIC RAM WITH PAGE MODE |
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