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參數(shù)資料
| 型號： | KM416S1020C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x 16Bit x 2 Banks Synchronous DRAM(512K x 16位 x 2組同步動態(tài)RAM) |
| 中文描述： | 為512k × 16 × 2銀行同步DRAM（為512k × 16位× 2組同步動態(tài)RAM）的 |
| 文件頁數(shù)： | 1/42頁 |
| 文件大小： | 582K |
| 代理商： | KM416S1020C |
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KM416S1020C
CMOS SDRAM
- 2 -
Rev. 0.4 (Apr. 1998)
Revision History
Revision 0.4 (April 17, 1998)
Changed DC/AC Test Output Load from 30pF to 50pF in
AC OPERATING TEST CONDITIONS
.
Changed tOH from 2.5ns to 3ns in KM416S1020C-8/H/L/10 in
AC CHARACTERISTICS
.
Revision 0.3 (April 2, 1998)
Changed DC/AC Test Output Load from 50pF to 30pF in
AC OPERATING TEST CONDITIONS
.
Changed tSAC from 6ns to 7ns, tSHZ from 6ns to 7ns @ CL=2 in KM416S1020C-8, tOH from 3ns to 2.5ns in
KM416S1020C-8/H/L/10 in
AC CHARACTERISTICS
.
Revision 0.2 (February 1998)
Input Leakage Currents (Inputs / DQ) are changed(IIL(Inputs) :
±
5uA to
±
1uA, IIL(DQ) :
±
5uA to
±
1.5uA.).
Cin to be measured at VDD = 3.3V, TA = 23
°
C, f = 1MHz, VREF =1.4V
±
200 mV.
Bining -7 is added.
Refresh cycle changed 2K/32ms to 4K/64ms.
AC Operating Condition is changed as defined :
- VIH(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
- VIL(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
Revision 0.1 (November 1997)
tRDL has changed 10ns to 12ns.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM416S1021C | 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interfacer(512K x 16位 x 2組同步動態(tài)RAM（帶SSTL接口）) |
| KM416S4020B | 2M x 16Bit x 2 Banks Synchronous DRAM(2M x 16位 x2組同步動態(tài)RAM) |
| KM416S4021B | 2M x 16Bit x 2 Banks Synchronous DRAM(2M x 16位 x2組同步動態(tài)RAM) |
| KM416S4030B | 1M x 16Bitx 4 Banks Synchronous DRAM(1M x 16位 x4組同步動態(tài)RAM) |
| KM416S4031B | 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface(1M x 16位 x4組同步動態(tài)RAM（帶SSTL接口）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416S1020CTG10 | 制造商:n/a 功能描述:KM416S1020CT-G10 制造商:Samsung Semiconductor 功能描述: |
| KM416S1020CT-G10 | 制造商:n/a 功能描述:KM416S1020CT-G10 制造商:Samsung Semiconductor 功能描述: |
| KM416S1020CT-G10M | 制造商:MAJOR 功能描述: |
| KM416S1021C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface |
| KM416S1021CT-G7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface |
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