參數(shù)資料
型號(hào): KM416V4004C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 16bit CMOS Dynamic RAM with Extended Data Out(4M x 16位 CMOS動(dòng)態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出))
中文描述: 4米× 16位的擴(kuò)展數(shù)據(jù)輸出的CMOS動(dòng)態(tài)RAM(4米× 16位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器(帶擴(kuò)展數(shù)據(jù)輸出))
文件頁數(shù): 36/36頁
文件大小: 732K
代理商: KM416V4004C
KM416V4004C,KM416V4104C
CMOS DRAM
50 TSOP(II) 400mil
Units : Inches (millimeters)
MAX
0.047 (1.20)
MIN
0.002 (0.05)
0.018 (0.45)
0.010 (0.25)
0.0315 (0.80)
0.034 (0.875)
0.821 (20.85)
0.829 (21.05)
0.841 (21.35)
MAX
0.010 (0.25)
0.004 (0.10)
0
0
0
0~8
0.030 (0.75)
0.018 (0.45)
TYP
0.010 (0.25)
O
PACKAGE DIMENSION
相關(guān)PDF資料
PDF描述
KM416V4100B 4M x 16bit CMOS Dynamic RAM with Fast Page Mode(4M x 16位 CMOS動(dòng)態(tài)RAM(帶快速頁模式))
KM41V4000D RES,Film,0.33Ohms,250WV,200ppm-TC,4112-Case RoHS Compliant: Yes
KM4211IM8TR3 Dual, 0.2mA, Low Cost, +2.7V & +5V, 35MHz Rail-to-Rail Amp
KM4211 Dual, 0.2mA, Low Cost, +2.7V & +5V, 35MHz Rail-to-Rail Amp
KM4211IM8 Dual, 0.2mA, Low Cost, +2.7V & +5V, 35MHz Rail-to-Rail Amp
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM416V4100B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode
KM416V4100C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode
KM416V4104B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM416V4104C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM416V4104CS-45 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out