- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374355 > KM432C515 (SAMSUNG SEMICONDUCTOR CO. LTD.) 512K x 32Bit CMOS Quad CAS DRAM with EDO(512K x 32位CMOS四 CAS 動(dòng)態(tài)RAM(帶EDO模式)) PDF資料下載
參數(shù)資料
| 型號(hào)： | KM432C515 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x 32Bit CMOS Quad CAS DRAM with EDO(512K x 32位CMOS四 CAS 動(dòng)態(tài)RAM(帶EDO模式)) |
| 中文描述： | 為512k × 32Bit的中科院的CMOS四路DRAM與江戶（512k × 32的位的CMOS四中科院動(dòng)態(tài)隨機(jī)存儲(chǔ)器（帶EDO公司模式）） |
| 文件頁數(shù)： | 4/21頁 |
| 文件大?。?/td> | 361K |
| 代理商： | KM432C515 |
CMOS DRAM
KM432C515, KM432V515
REV. 0.
Apr. 1998
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one Hyper page mode cycle time, t
HPC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current ( RAS and CAS cycling @t
RC
=min. )
I
CC2
: Standby Current ( RAS = CAS = W = V
IH
)
I
CC3
* : RAS-only Refresh Current ( CAS = V
IH
, RAS, Address cycling @t
RC
=min. )
I
CC4
* : Hyper Page Mode Current ( RAS = V
IL
, CAS, Address cycling @t
HPC
=min. )
I
CC5
: Standby Current ( RAS = CAS = W = V
CC
-0.2V )
I
CC6
* : CAS-Before-RAS Refresh Current ( RAS, CAS cycling @t
RC
=min. )
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
) = V
CC
-0.2V, Input low voltage(V
IL
) = 0.2V, CAS = 0.2V,
Din = Don't care, t
RC
= 125us(1K/L-ver)
t
RAS
= t
RAS
min~300ns
I
CCS
: Self Refresh Current
RAS=CAS0~3 =V
IL
, W = OE = A0 ~ A9 = V
CC
-0.2V or 0.2V,
DQ0 ~ DQ31 = V
CC
-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
KM432V515
-
150
-
1
-
150
-
100
500
300
-
150
300
200
KM432C515
160
150
2
1
160
150
110
100
1000
500
160
150
500
300
I
CC1
Don't care
-5
-6
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
mA
mA
uA
uA
I
CC2
Normal
L-ver
Don't care
I
CC3
Don't care
-5
-6
-5
-6
I
CC4
Don't care
I
CC5
Normal
L-ver
Don't care
I
CC6
Don't care
-5
-6
I
CC7
I
CCS
L-ver
L-ver
Don't care
Don't care
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM432S2030B | 512K x 32Bit x 4 Banks Synchronous DRAM(512K x 32位 x 4 組同步動(dòng)態(tài)RAM) |
| KM432V515 | 512K x 32Bit CMOS Quad CAS DRAM with EDO(512K x 32位CMOS四 CAS 動(dòng)態(tài)RAM(帶EDO模式)) |
| KM4470 | Low Cost, +2.7V & +5V, Rail-to-Rail I/O Amplifiers |
| KM4170 | Low Cost, +2.7V & +5V, Rail-to-Rail I/O Amplifiers |
| KM4170IS5TR3 | Low Cost, +2.7V & +5V, Rail-to-Rail I/O Amplifiers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM432D5131TQ-G8 | 制造商:Samsung Semiconductor 功能描述: |
| KM432J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:R. F. Molded Chokes |
| KM432S2030C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| KM432S2030CT-F10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| KM432S2030CT-F6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。