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參數(shù)資料
| 型號： | KM44L32031BT-G(L)Y |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR SDRAM Specification Version 1.0 |
| 中文描述： | DDR SDRAM的規(guī)范版本1.0 |
| 文件頁數(shù)： | 7/53頁 |
| 文件大小： | 669K |
| 代理商： | KM44L32031BT-G(L)Y |
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REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Figure 1 : 128Mb Package Pinout
Figure 2 : Package dimension
Figure 3 :State digram 14
Figure 4 : Power up and initialization sequence
Figure 5 : Mode register set 16
Figure 6 : Mode register set sequence
Figure 7 : Extend mode register set 18
Figure 8 : Bank activation command cycle timing
Figure 9 : Burst read operation timing 21
Figure 10 : Burst write operation timing
Figure 11 : Read interrupted by a read timing 23
Figure 12 : Read interrupted by a write and burst stop timing
Figure 13 : Read interrupted by a precharge timing 24
Figure 14 : Write interrupted by a write timing
Figure 15 : Write interrupted by a read and DM timing 26
Figure 16 : Write interrupted by a precharge and DM timing
Figure 17 : Burst stop timing 28
Figure 18 : DM masking timing
Figure 19 : Read with auto precharge timing 30
Figure 20 : Write with auto precharge timing
Figure 21 : Auto refresh timing 32
Figure 22 : Self refresh timing
Figure 23 : Power down entry and exit timing 33
Figure 24 : Output Load Circuit (SSTL_2)
Figure 25 : I / V characteristics for input/output buffers:
pull-up(above) and pull-down(below)
Figure 26 : QFC timing on read operation 49
Figure 27 : QFC timing on write operation with tDQSSmax
Figure 28 : QFC timing on write operation with tDQSSmin
Figure 29 : QFC timing example for interrupted writes operation
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM44L32031BT-GLZ/Y/0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Specification Version 1.0 |
| KM44S16020CT-G10 | 制造商:SEC 功能描述: |
| KM44S32030 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 4Bit x 4 Banks Synchronous DRAM |
| KM44S32030B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| KM44S32030BT-G/F10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
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