參數(shù)資料
型號: KMM5361203C2WG
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh
中文描述: 100萬× 36的DRAM使用1Mx16上海藥物研究所和中國科學(xué)院1Mx4四,每1000刷新
文件頁數(shù): 12/17頁
文件大?。?/td> 280K
代理商: KMM5361203C2WG
DRAM MODULE
KMM5361203C2W/C2WG
Rev. 0.0 (Nov. 1997)
- 12 -
RAS
V
IH
-
V
IL
-
CAS
V
IH
-
V
IL
-
A
V
IH
-
V
IL
-
ROW
ADDR
t
RAS
t
RC
t
RP
t
ASR
t
RAH
t
CRP
Don
t care
RAS - ONLY REFRESH CYCLE
NOTE : W, OE, D
IN
= Don't care
Undefined
D
OUT
= OPEN
t
RPC
t
CRP
CAS - BEFORE - RAS REFRESH CYCLE
NOTE : OE, A = Don't care
RAS
V
IH
-
V
IL
-
CAS
V
IH
-
V
IL
-
t
RAS
t
RC
t
RP
t
WRP
t
RPC
t
RP
t
CP
t
CHR
t
CSR
W
V
IH
-
V
IL
-
t
WRH
t
OFF
t
RPC
V
OH
-
V
OL
-
DQ
OPEN
相關(guān)PDF資料
PDF描述
KMM5361205C2W 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
KMM5361205C2WG 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
KMM53632000BK 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
KMM53632000CK 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
KMM53632000BKG 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KMM5361205C2W 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
KMM5361205C2WG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
KMM53616000BK 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
KMM53616000BKG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
KMM53616000CK 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V