參數(shù)資料
型號: KMM5361205C2W
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
中文描述: 100萬× 36的DRAM上海藥物研究所和4M使用1Mx16四中科院江戶,一千刷新
文件頁數(shù): 11/17頁
文件大?。?/td> 289K
代理商: KMM5361205C2W
DRAM MODULE
KMM5361205C2W/C2WG
Rev. 0.0 (Nov. 1997)
- 11 -
RAS
V
IH
-
V
IL
-
CAS
V
IH
-
V
IL
-
A
V
IH
-
V
IL
-
W
V
IH
-
V
IL
-
COLUMN
ADDRESS
ROW
ADDR.
t
RASP
t
RP
t
RCD
t
ASR
t
CRP
Don
t care
HYPER PAGE WRITE CYCLE ( EARLY WRITE )
Undefined
V
IH
-
V
IL
-
DQ
t
RHCP
t
RAD
t
RAH
t
CAH
t
CAH
t
ASC
t
CAH
t
ASC
VALID
DATA-IN
t
DS
ó
COLUMN
ADDRESS
COLUMN
ADDRESS
t
CAS
t
CP
t
CAS
t
CP
t
CAS
t
RSH
ó
t
CSH
t
ASC
ó
ó
t
WP
t
WCS
t
WCH
t
WP
t
WCS
t
WCH
t
WP
t
WCS
t
WCH
ó
VALID
DATA-IN
VALID
DATA-IN
ó
ó
t
DH
t
DS
t
DH
t
DS
t
DH
t
CWL
t
CWL
t
CWL
t
RWL
NOTE : D
OUT
= OPEN
t
HPC
t
HPC
相關(guān)PDF資料
PDF描述
KMM5361205C2WG 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
KMM53632000BK 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
KMM53632000CK 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
KMM53632000BKG 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
KMM53632000CKG 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KMM5361205C2WG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
KMM53616000BK 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
KMM53616000BKG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
KMM53616000CK 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
KMM53616000CKG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V