參數(shù)資料
型號: KMM5361205C2W
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
中文描述: 100萬× 36的DRAM上海藥物研究所和4M使用1Mx16四中科院江戶,一千刷新
文件頁數(shù): 17/17頁
文件大小: 289K
代理商: KMM5361205C2W
DRAM MODULE
KMM5361205C2W/C2WG
Rev. 0.0 (Nov. 1997)
- 17 -
PACKAGE DIMENSIONS
.133(3.38)
4.250(107.95)
3.984(101.19)
.125(3.17)
MIN
R.062
±
.004(R1.57
±
.10)
.250(6.35)
3.750(95.25)
.250(6.35)
Units : Inches (millimeters)
Gold & Solder Plating Lead
.010(.25)MAX
.050(1.27)
.041
.004(1.04
±
.10)
.100(2.54)
MIN
.200(5.08)
MAX
.054(1.37)
.047(1.19)
Tolerances :
±
.005(.13) unless otherwise specified
NOTE : The used device are 1Mx16 EDO DRAM and 1Mx4 Quad CAS with EDO DRAM, TSOP
DRAM Part No. : KMM5361205C2W/C2WG -- KM416C1204CJ (400 mil)
-- KM44C1005DJ (300 mil)
.750(19.05)
.400(10.16)
.125 DIA
±
.002(3.18
±
.051)
R.062(1.57)
.250(6.35)
.080(2.03)
( Back view )
( Front view )
Revision History
Rev 0.0 : Nov. 1997
相關(guān)PDF資料
PDF描述
KMM5361205C2WG 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
KMM53632000BK 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
KMM53632000CK 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
KMM53632000BKG 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
KMM53632000CKG 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KMM5361205C2WG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
KMM53616000BK 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
KMM53616000BKG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
KMM53616000CK 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
KMM53616000CKG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V