參數(shù)資料
型號(hào): KMPC8533EVTAQG
廠商: Freescale Semiconductor
文件頁(yè)數(shù): 105/112頁(yè)
文件大小: 0K
描述: IC MPU POWERQUICC III 783-PBGA
標(biāo)準(zhǔn)包裝: 5
系列: MPC8xx
處理器類(lèi)型: 32-位 MPC85xx PowerQUICC III
速度: 1.0GHz
電壓: 1V
安裝類(lèi)型: 表面貼裝
封裝/外殼: 783-BBGA,F(xiàn)CBGA
供應(yīng)商設(shè)備封裝: 783-FCPBGA(29x29)
包裝: 托盤(pán)
MPC8533E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 6
92
Freescale Semiconductor
Thermal
Table 66 provides the thermal resistance with heat sink in open flow.
Simulations with heat sinks were done with the package mounted on the 2s2p thermal test board. The
thermal interface material was a typical thermal grease such as Dow Corning 340 or Wakefield 120 grease.
For system thermal modeling, the MPC8533E thermal model without a lid is shown in Figure 56. The
substrate is modeled as a block 29
29 1.18 mm with an in-plane conductivity of 18.0 W/mK and a
through-plane conductivity of 1.0 W/mK. The solder balls and air are modeled as a single block
29
29 0.58 mm with an in-plane conductivity of 0.034 W/mK and a through plane conductivity of
12.1 W/mK. The die is modeled as 7.6
8.4 mm with a thickness of 0.75 mm. The bump/underfill layer
is modeled as a collapsed thermal resistance between the die and substrate assuming a conductivity of
6.5 W/mK in the thickness dimension of 0.07 mm. The die is centered on the substrate. The thermal model
uses approximate dimensions to reduce grid. Please refer to Figure 55 for actual dimensions.
20.2
Recommended Thermal Model
Table 67 shows the MPC8533E thermal model.
Table 66. Thermal Resistance with Heat Sink in Open Flow
Heat Sink with Thermal Grease
Air Flow
Thermal Resistance (
C/W)
Wakefield 53
53 25 mm pin fin
Natural convection
6.1
Wakefield 53
53 25 mm pin fin
1 m/s
3.0
Aavid 35
31 23 mm pin fin
Natural convection
8.1
Aavid 35
31 23 mm pin fin
1 m/s
4.3
Aavid 30
30 9.4 mm pin fin
Natural convection
11.6
Aavid 30
30 9.4 mm pin fin
1 m/s
6.7
Aavid 43
41 16.5 mm pin fin
Natural convection
8.3
Aavid 43
41 16.5 mm pin fin
1 m/s
4.3
Table 67. MPC8533EThermal Model
Conductivity
Value
Units
Die (7.6
8.4 0.75mm)
Silicon
Temperature dependent
Bump/Underfill (7.6
8.4 0.070 mm) Collapsed Thermal Resistance
Kz
6.5
W/mK
Substrate (29
29 1.18 mm)
Kx
18
W/mK
Ky
18
Kz
1.0
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