參數(shù)資料
型號(hào): KSD1588
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: LOW FREQUENCY POWER AMPLIFIER
中文描述: 7 A, 60 V, NPN, Si, POWER TRANSISTOR
封裝: TO-220F, 3 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 45K
代理商: KSD1588
2000 Fairchild Semiconductor International
Rev. A, February 2000
K
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
*Collector Current (Pulse)
I
B
Base Current
P
C
Collector Dissipation (T
a
=25
°
C)
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
* PW
300
μ
s, Duty Cycle
10%
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE1
h
FE2
V
CE
(sat)
*Collector-Emitter Saturation Voltage
V
BE
(sat)
*Base-Emitter Saturation Voltage
* Pulse Test: PW
350
μ
s, Duty Cycle
2%
h
FE1
Classification
Classification
Parameter
Value
100
60
7
7
15
3.5
2
30
150
-55 ~ 150
Units
V
V
V
A
A
A
W
W
°
C
°
C
Test Condition
V
CB
= 80V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 1V, I
C
= 3A
V
CE
= 1V, I
C
= 5A
I
C
= 5A, I
B
= 0.5A
I
C
= 5A, I
B
= 0.5A
Min.
Max.
10
10
200
Units
μ
A
μ
A
*DC Current Gain
40
20
0.5
1.5
V
V
R
O
Y
h
FE1
40 ~ 80
80 ~ 120
100 ~ 200
KSD1588
Low Frequency Power Amplifier
Low Speed Switching
Complement to KSB1097
1
1.Base 2.Collector 3.Emitter
TO-220F
相關(guān)PDF資料
PDF描述
KSD1589 LOW FREQUENCY POWER AMPLIFIER
KSD1621 High Current Driver Applications
KSD1691 Feature
KSD1943 High Power Transistor
KSD1944 High Gain Power Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KSD1588OTU 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
KSD1588RTU 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
KSD1588YTU 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
KSD1589 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Low Frequency Power Amplifier
KSD1589_03 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Low Frequency Power Amplifier Low Speed Switching Industrial Use