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參數(shù)資料
| 型號： | KST3904 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | General Purpose Transistor |
| 中文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 55K |
| 代理商： | KST3904 |
2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002
K
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Electrical Characteristics
T
a
=25
°
C
unless otherwise noted
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
Symbol
Parameter
Value
60
40
6
200
350
150
Units
V
V
V
mA
mW
°
C
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
Parameter
Test Condition
Min.
60
40
6
Max.
Units
V
V
V
nA
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
* DC Current Gain
I
C
=10
μ
A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10
μ
A, I
C
=0
V
CE
=30V, V
EB
=3V
V
CE
=1V, I
C
=0.1mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=100mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CB
=5V, I
E
=0, f=1MHz
V
CE
=20V, I
C
=10mA, f=100MHz
I
C
=100
μ
A, V
CE
=5V, R
S
=1K
f=10Hz to 15.7KHz
V
CC
=3V, V
BE
=0.5V
I
C
=10mA, I
B1
=1mA
V
CC
=3V, I
C
=10mA,
I
B1
=I
B2
=1mA
50
40
70
100
60
30
300
V
CE
(sat)
* Collector-Emitter Saturation Voltage
0.2
0.3
0.85
0.95
4
V
V
V
V
pF
MHz
dB
V
BE
(sat)
* Base-Emitter Saturation Voltage
0.65
C
ob
f
T
NF
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
300
5
t
ON
Turn On Time
70
ns
t
OFF
Turn Off Time
250
ns
KST3904
General Purpose Transistor
1A
Marking
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
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| KST3904_11 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Epitaxial Silicon Transistor |
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| KST3904MTF | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KST3904MTF_Q | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KST3904TF | 制造商:SAMSG 功能描述: |
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