參數(shù)資料
型號: LH52D1000
廠商: Sharp Corporation
英文描述: CMOS 1M (128K x 8) Static Ram
中文描述: 100萬的CMOS(128K的× 8)靜態(tài)RAM
文件頁數(shù): 1/12頁
文件大小: 81K
代理商: LH52D1000
LH52D1000
CMOS 1M (128K
×
8) Static Ram
FEATURES
Access time: 85 ns (MAX.),
100 ns (MAX.)
Current consumption:
Operating: 40 mA (MAX.)
6 mA (MAX.) (t
RC
, t
WC
= 1
μ
s)
Standby: 45
μ
A (MAX.)
Data Retention:
1.0
μ
A (MAX. V
CCDR
= 3 V, t
A
= 25
°
C)
Single power supply: 2.7 V to 3.6 V
Operating temperature: -40
°
C to +85
°
C
Fully-static operation
Three-state output
Not designed or rated as radiation
hardened
Packages:
32-pin 8
×
20 mm
2
TSOP
32-pin 8
×
13.4 mm
2
STSOP
N-type bulk silicon
DESCRIPTION
The LH52D1000 is a static RAM organized as
131,072
×
8 bits which provides low-power standby
mode. It is fabricated using silicon-gate CMOS process
technology.
PIN CONNECTIONS
2
3
4
5
6
7
9
10
8
11
1
32
31
30
29
26
25
28
27
24
23
OE
A
10
32-PIN TSOP
32-PIN STSOP
12
15
13
14
21
20
22
19
18
A
8
A
13
CE
2
A
15
V
CC
NC
I/O
3
I/O
2
I/O
1
A
1
A
2
A
3
I/O
8
I/O
7
CE
1
I/O
6
I/O
5
I/O
4
GND
A
0
52D1000S-1
A
16
A
14
A
12
A
7
A
6
A
5
A
4
16
17
WE
TOP VIEW
A
9
A
11
Figure 1. Pin Connections for TSOP
and STSOP Packages
1
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