參數(shù)資料
型號: LRS1341
廠商: Sharp Corporation
英文描述: Stacked Chip 16M Flash Memory and 2M SRAM
中文描述: 堆疊芯片1,600快閃記憶體以及2M SRAM
文件頁數(shù): 8/24頁
文件大小: 197K
代理商: LRS1341
LRS1341/LRS1342
Stacked Chip (16M Flash & 2M SRAM)
8
Data Sheet
DC CHARACTERISTICS
T
A
= -25
°
C to + 85
°
C, V
CC
= 2.7 V to 3.6 V
NOTES:
1. Reference values at V
CC
= 3.0 V and T
A
= +25
°
C.
2. Includes F-RY/BY.
3. Automatic Power Savings (APS) for Flash Memory reduces typi-
cal I
CCR
to 3 mA at 2.7 V
CC
in static operation.
4. CMOS inputs are either V
CC
± 0.2 V or GND ± 0.2 V. TTL inputs
are either V
IL
or V
IH
.
5. Block erases and word writes are inhibited when F-V
PP
V
PPLK
and
not guaranteed in the range between V
PPLK
(MAX.) and V
PPH
(MIN.), and above V
PPH
(MAX.).
6. F-RP connection to a V
HH
supply is allowed for a maximum cumu-
lative period of 80 hours.
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
1
MAX.
UNIT
NOTES
Input leakage current
I
LI
I
LO
V
IN
= V
CC
or GND
V
OUT
= V
CC
or GND
F-CE = F-RP = F-V
CC
± 0.2 V
F-WP = F-V
CC
± 0.2 V
or F-GND ± 0.2 V
-1.5
+1.5
μA
Output leakage current
-1.5
+1.5
μA
F-V
CC
Standby Current
I
CCS
25
50
μA
2
F-CE = F-RP = V
IH,
F-WP = V
IH
or V
IL
F-RP = F-GND ± 0.2 V,
I
OUT
(F-RY/BY) = 0 mA
CMOS input, F-CE = F-GND,
f = 5 MHz, I
OUT
= 0 mA
TTL input, F-CE = F-GND,
f = 5 MHz, I
OUT
= 0 mA
F-V
PP
= 2.7 V to 3.6 V
F-V
PP
= 11.4 V to 12.6 V
F-V
PP
= 2.7 V to 3.6 V
F-V
PP
= 11.4 V to 12.6 V
0.2
2
mA
Deep Power-Down Current
I
CCD
5
10
μA
Read Current
I
CCR
25
mA
3, 4
30
mA
3, 4
Word Write Current
I
CCW
17
mA
12
mA
Block Erase Current
I
CCE
17
mA
12
mA
Word Write Block Erase
Suspend Current
I
CCWS
I
CCES
F-CE = V
IH
6
mA
F-V
PP
Standby or Read Current
I
PPS
I
PPR
I
PPD
F-V
PP
= F-V
CC
F-V
PP
> F-V
CC
F-RP = F-GND ± 0.2 V
±2
±15
μA
10
200
μA
Deep Power-Down Current
0.1
5
μA
Word Write Current
I
PPW
F-V
PP
= 2.7 V to 3.6 V
F-V
PP
= 11.4 V to 12.6 V
F-V
PP
= 2.7 V to 3.6 V
F-V
PP
= 11.4 V to 12.6 V
12
40
mA
30
mA
Block Erase Current
I
PPE
8
25
mA
20
mA
Word Write or Block Erase
Suspend Current
I
PPWS
I
PPES
F-V
PP
= V
PPH
10
200
μA
S-V
CC
Standby Current
I
SB
S-CE
1
, S-CE
2
S-V
CC
- 0.2 V
or S-CE
2
0.2 V
S-CE
1
= V
IH
or S-CE
2
= V
IL
S-CE
1
= V
IL
, S-CE
2
= V
IH
, V
IN
= V
IL
or
V
IH
, t
CYCLE
= MIN., I
I/O
= 0 mA
S-CE
1
= 0.2 V, S-CE
2
= S-V
CC
- 0.2 V,
V
IN
= S-V
CC
- 0.2 V, or 0.2 V
t
CYCLE
= 1 μs, I
I/O
= 0 mA
45
μA
I
SB1
3
mA
Operation Current
I
CC1
45
mA
I
CC2
8
mA
Input LOW Voltage
V
IL
V
IH
V
OL
V
OH1
V
PPLK
V
PPH1
V
PPH2
V
LKO
V
HH
-0.2
0.6
V
Input HIGH Voltage
2.2
V
CC
+ 0.2
0.4
V
Output LOW Voltage
I
OL
= 0.5 mA
I
OH
= -0.5 mA
V
2
Output HIGH Voltage (CMOS)
2.2
V
2
F-V
PP
Lockout during Normal Operations
F-V
PP
Word Write or Block Erase
Operations
1.5
V
5
2.7
3.6
V
11.4
12.6
V
F-V
CC
Lockout Voltage
F-RP Unlock Voltage
1.5
V
Unavailable F-WP
11.4
12.6
V
6
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