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參數(shù)資料
| 型號： | LTC1155C |
| 廠商： | Linear Technology Corporation |
| 英文描述： | Dual High Side Micropower MOSFET Driver |
| 中文描述： | 雙路高端微功率MOSFET驅(qū)動器 |
| 文件頁數(shù)： | 15/16頁 |
| 文件大?。?/td> | 340K |
| 代理商： | LTC1155C |
15
LTC1155
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
U
PACKAGE DESCRIPTIO
Dimensions in inches (milimeters) unless otherwise noted.
1
2
3
4
0.150 – 0.157**
(3.810 – 3.988)
8
7
6
5
0.189 – 0.197*
(4.801 – 5.004)
0.228 – 0.244
(5.791 – 6.197)
0.016 – 0.050
0.406 – 1.270
0.010 – 0.020
(0.254 – 0.508)
×
45
°
0
°
– 8
°
TYP
0.008 – 0.010
(0.203 – 0.254)
SO8 0996
0.053 – 0.069
(1.346 – 1.752)
0.014 – 0.019
(0.355 – 0.483)
0.004 – 0.010
(0.101 – 0.254)
0.050
(1.270)
TYP
DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
*
**
S8 Package
8-Lead Plastic Small Outline (Narrow 0.150)
(LTC DWG # 05-08-1610)
J8 Package
8-Lead CERDIP (Narrow 0.300, Hermetic)
(LTC DWG # 05-08-1110)
J8 1197
0.045 – 0.068
(1.143 – 1.727)
FULL LEAD
OPTION
0.023 – 0.045
(0.584 – 1.143)
HALF LEAD
OPTION
CORNER LEADS OPTION
(4 PLCS)
0.300 BSC
(0.762 BSC)
0.008 – 0.018
(0.203 – 0.457)
0
°
– 15
°
0.005
(0.127)
MIN
0.405
(10.287)
MAX
0.220 – 0.310
(5.588 – 7.874)
1
2
3
4
8
7
6
5
0.025
(0.635)
RAD TYP
0.014 – 0.026
(0.360 – 0.660)
0.200
(5.080)
MAX
0.015 – 0.060
(0.381 – 1.524)
0.125
3.175
MIN
0.100
±
0.010
(2.540
±
0.254)
0.045 – 0.068
(1.143 – 1.727)
NOTE: LEAD DIMENSIONS APPLY TO SOLDER DIP/PLATE
OR TIN PLATE LEADS
N8 1197
0.100
±
0.010
(2.540
±
0.254)
0.065
(1.651)
TYP
0.045 – 0.065
(1.143 – 1.651)
0.130
±
0.005
(3.302
±
0.127)
0.020
(0.508)
MIN
0.018
±
0.0
(0.457
±
0.076)
0.125
(3.175)
MIN
0.009 – 0.015
(0.229 – 0.381)
0.300 – 0.325
(7.620 – 8.255)
0.325–0.015
+0.889
–0.381
8.255
(
)
1
2
3
4
8
7
6
5
0.255
±
0.015*
(6.477
±
0.381)
0.400*
(10.160)
MAX
*THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.010 INCH (0.254mm)
N8 Package
8-Lead PDIP (Narrow 0.300)
(LTC DWG # 05-08-1510)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LTC1155CJ8 | 制造商:LINER 制造商全稱:Linear Technology 功能描述:Dual High Side Micropower MOSFET Driver |
| LTC1155CN8 | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8-DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1155CN8#PBF | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8-DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準包裝:95 系列:- 配置:高端和低端，獨立 輸入類型:非反相 延遲時間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
| LTC1155CS8 | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1155CS8#PBF | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準包裝:95 系列:- 配置:高端和低端，獨立 輸入類型:非反相 延遲時間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
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