參數(shù)資料
型號: LTC1155C
廠商: Linear Technology Corporation
英文描述: Dual High Side Micropower MOSFET Driver
中文描述: 雙路高端微功率MOSFET驅(qū)動(dòng)器
文件頁數(shù): 2/16頁
文件大?。?/td> 340K
代理商: LTC1155C
2
LTC1155
Supply Voltage ........................................................ 22V
Input Voltage ...................... (V
S
+0.3V) to (GND –0.3V)
Gate Voltage .........................(V
S
+24V) to (GND –0.3V)
Current (Any Pin).................................................. 50mA
Storage Temperature Range................. –65
°
C to 150
°
C
A
U
G
W
A
W
U
W
A
R
BSOLUTE
XI
TI
S
Operating Temperature Range
LTC1155C................................................0
°
C to 70
°
C
LTC1155I........................................... –40
°
C to 85
°
C
LTC1155M........................................ –55
°
C to 125
°
C
Lead Temperature Range (Soldering, 10 sec.)......300
°
C
(Note 1)
ELECTRICAL C
The
G
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at T
A
= 25
°
C.
V
S
= 4.5V to 18V, unless otherwise noted.
HARA TERISTICS
LTC1155M
TYP
LTC1155C/LTC1155I
MIN
TYP
4.5
8
85
180
2.0
SYMBOL
V
S
I
Q
PARAMETER
Supply Voltage
Quiescent Current OFF
Quiescent Current ON
Quiescent Current ON
Input High Voltage
Input Low Voltage
Input Current
Input Capacitance
Drain Sense Threshold Voltage
CONDITIONS
MIN
4.5
MAX
18
20
120
400
MAX
18
20
120
400
UNITS
G
V
V
IN
= 0V, V
S
= 5V (Note 2)
V
S
= 5V, V
IN
= 5V (Note 3)
V
S
= 12V, V
IN
= 5V (Note 3)
8
μ
A
μ
A
μ
A
85
180
V
INH
V
INL
I
IN
C
IN
V
SEN
G
2.0
V
V
G
0.8
±
1.0
0.8
±
1.0
0V < V
IN
< V
S
G
μ
A
pF
mV
mV
μ
A
5
5
80
75
100
100
120
125
±
0.1
9.0
15
25
80
75
100
100
120
125
±
0.1
9.0
15
25
G
I
SEN
V
GATE
-V
S
Drain Sense Input Current
Gate Voltage Above Supply
0V < V
SEN
< V
S
V
S
= 5V
V
S
= 6V
V
S
= 12V
V
S
= 5V, C
GATE
= 1000pF
Time for V
GATE
> V
S
+ 2V
Time for V
GATE
> V
S
+ 5V
V
S
= 12V, C
GATE
= 1000pF
Time for V
GATE
> V
S
+ 5V
Time for V
GATE
> V
S
+ 10V
G
G
G
6.0
7.5
15
6.8
8.5
18
6.0
7.5
15
6.8
8.5
18
V
V
V
t
ON
Turn ON Time
50
200
250
1100
750
2000
50
200
250
1100
750
2000
μ
s
μ
s
50
120
180
450
500
1200
50
120
180
450
500
1200
μ
s
μ
s
U
PACKAGE/ORDER U
ORDER PART
NUMBER
1
2
3
4
8
7
6
5
TOP VIEW
DS1
G1
GND
IN1
DS2
G2
V
S
IN2
J8 PACKAGE
8-LEAD CERDIP
N8 PAC
8-LEAD PDIP
T
JMAX
= 150
°
C,
θ
JA
= 100
°
C/W (J8)
T
JMAX
= 100
°
C,
θ
JA
= 130
°
C/W (N8)
LTC1155CN8
LTC1155CJ8
LTC1155IN8
LTC1155MJ8
ORDER PART
NUMBER
S8 PART MARKING
LTC1155CS8
LTC1155IS8
1155
1155I
T
JMAX
= 100
°
C,
θ
JA
= 150
°
C/W
1
2
3
4
8
7
6
5
TOP VIEW
DS2
G2
V
S
IN2
DS1
G1
GND
IN1
S8 PACKAGE
8-LEAD PLASTIC SO
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LTC1155CJ8 制造商:LINER 制造商全稱:Linear Technology 功能描述:Dual High Side Micropower MOSFET Driver
LTC1155CN8 功能描述:IC MOSFET DVR HI-SIDE DUAL 8-DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大(自引導(dǎo)啟動(dòng)):- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
LTC1155CN8#PBF 功能描述:IC MOSFET DVR HI-SIDE DUAL 8-DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端,獨(dú)立 輸入類型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大(自引導(dǎo)啟動(dòng)):600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF)
LTC1155CS8 功能描述:IC MOSFET DVR HI-SIDE DUAL 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大(自引導(dǎo)啟動(dòng)):- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
LTC1155CS8#PBF 功能描述:IC MOSFET DVR HI-SIDE DUAL 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端,獨(dú)立 輸入類型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大(自引導(dǎo)啟動(dòng)):600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF)