參數(shù)資料
型號(hào)： M25PE16-VMP6TP
廠商： 意法半導(dǎo)體
元件分類： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門，串行閃存
文件頁(yè)數(shù)： 14/56頁(yè)
文件大?。?/td> 334K
代理商： M25PE16-VMP6TP
Operating features
M25PE16
14/56
4.7
Status Register
The Status Register contains a number of status and control bits that can be read or set (as
appropriate) by using specific instructions. See
Section 6.4: Read Status Register (RDSR)
for a detailed description of the Status Register bits.
4.8
Protection modes
The environments where non-volatile memory devices are used can be very noisy. No SPI
device can operate correctly in the presence of excessive noise. To help combat this and to
meet the needs of modularized applications, the M25PE16 features the following flexible
data protection mechanisms:
4.8.1
Protocol-related protections
●
Power On Reset and an internal timer (t
PUW
) can provide protection against inadvertent
changes while the power supply is outside the operating specification.
Program, Erase and Write instructions are checked that they consist of a number of
clock pulses that is a multiple of eight, before they are accepted for execution.
All instructions that modify data must be preceded by a Write Enable (WREN)
instruction to set the Write Enable Latch (WEL) bit. This bit is returned to its reset state
by the following events:
–
Power-up
–
Reset (RESET) driven Low
–
Write Disable (WRDI) instruction completion
–
Page Write (PW) instruction completion
–
Write Status Register (WRSR) instruction completion
–
Page Program (PP) instruction completion
–
Write to Lock Register (WRLR) instruction completion
–
Page Erase (PE) instruction completion
–
SubSector Erase (SSE) instruction completion
–
Sector Erase (SE) instruction completion
–
Bulk Erase (BE) instruction completion
The Reset (RESET) signal can be driven Low to freeze and reset the internal logic. For
the specific cases of Program and Write cycles, the designer should refer to
Section 6.5: Write Status Register (WRSR)
,
Section 6.9: Page Write (PW)
,
Section 6.10: Page Program (PP)
,
Section 6.12: Page Erase (PE)
,
Section 6.13: Sector
Erase (SE)
and
Section 6.14: SubSector Erase (SSE)
, and to
Table 12: Device status
after a RESET Low pulse
.
In addition to the low power consumption feature, the Deep Power-down mode offers
extra software protection from inadvertent Write, Program and Erase instructions while
the device is not in active use.
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相關(guān)PDF資料
PDF描述
M25PE16-VMW6G 4 Mbit Uniform Sector, Serial Flash Memory
M25PE16-VMW6P 4 Mbit Uniform Sector, Serial Flash Memory
M25PE16-VMW6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE16-VMW6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25PE40 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PE16-VMW6G 功能描述:閃存 16 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M25PE16-VMW6P 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout
M25PE16-VMW6TG 功能描述:閃存 16 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M25PE16-VMW6TP 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout
M25PE20 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout
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