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參數(shù)資料
| 型號： | M25PE16-VMP6TP |
| 廠商： | 意法半導體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 36/56頁 |
| 文件大?。?/td> | 334K |
| 代理商： | M25PE16-VMP6TP |
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Instructions
M25PE16
36/56
6.11
Write to Lock Register (WRLR)
The Write to Lock Register (WRLR) instruction allows bits to be changed in the Lock
Registers. Before it can be accepted, a Write Enable (WREN) instruction must previously
have been executed. After the Write Enable (WREN) instruction has been decoded, the
device sets the Write Enable Latch (WEL).
The Write to Lock Register (WRLR) instruction is entered by driving Chip Select (S) Low,
followed by the instruction code, three address Bytes (pointing to any address in the
targeted sector and one data Byte on Serial Data Input (D). The instruction sequence is
shown in
Figure 16
. Chip Select (S) must be driven High after the eighth bit of the data Byte
has been latched in, otherwise the Write to Lock Register (WRLR) instruction is not
executed.
Lock Register bits are volatile, and therefore do not require time to be written. When the
Write to Lock Register (WRLR) instruction has been successfully executed, the Write
Enable Latch (WEL) bit is reset after a delay time less than t
SHSL
minimum value.
Any Write to Lock Register (WRLR) instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Figure 16.
Write to Lock Register (WRLR) instruction sequence
Table 10.
Lock Register in
Sector
Bit
Value
All Sectors
b7-b2
‘0’
b1
Sector Lock Down Bit Value (refer to
Table 9
)
b0
Sector Write Lock Bit Value (refer to
Table 9
)
AI10784
C
D
S
23
2
1
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35
22 21
3
2
1
0
36 37 38
Instruction
24-Bit Address
0
7
6
5
4
3
2
0
1
Lock Register
In
39
MSB
MSB
相關PDF資料 |
PDF描述 |
|---|---|
| M25PE16-VMW6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE16-VMW6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE16-VMW6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE16-VMW6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40 | 4 Mbit Uniform Sector, Serial Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE16-VMW6G | 功能描述:閃存 16 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE16-VMW6P | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout |
| M25PE16-VMW6TG | 功能描述:閃存 16 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE16-VMW6TP | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout |
| M25PE20 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout |
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