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參數(shù)資料
| 型號： | M25PE20-VMN6G |
| 廠商： | 意法半導體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 12/60頁 |
| 文件大?。?/td> | 310K |
| 代理商： | M25PE20-VMN6G |
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Operating features
M25PE20, M25PE10
12/60
4
Operating features
4.1
Sharing the overhead of modifying data
To write or program one (or more) data Bytes, two instructions are required: Write Enable
(WREN), which is one Byte, and a Page Write (PW) or Page Program (PP) sequence, which
consists of four Bytes plus data. This is followed by the internal cycle (of duration t
PW
or t
PP
).
To share this overhead, the Page Write (PW) or Page Program (PP) instruction allows up to
256 Bytes to be programmed (changing bits from 1 to 0) or written (changing bits to 0 or 1)
at a time, provided that they lie in consecutive addresses on the same page of memory.
4.2
An easy way to modify data
The Page Write (PW) instruction provides a convenient way of modifying data (up to 256
contiguous Bytes at a time), and simply requires the start address, and the new data in the
instruction sequence.
The Page Write (PW) instruction is entered by driving Chip Select (S) Low, and then
transmitting the instruction Byte, three address Bytes (A23-A0) and at least one data Byte,
and then driving Chip Select (S) High. While Chip Select (S) is being held Low, the data
Bytes are written to the data buffer, starting at the address given in the third address Byte
(A7-A0). When Chip Select (S) is driven High, the Write cycle starts. The remaining,
unchanged, Bytes of the data buffer are automatically loaded with the values of the
corresponding Bytes of the addressed memory page. The addressed memory page then
automatically put into an Erase cycle. Finally, the addressed memory page is programmed
with the contents of the data buffer.
All of this buffer management is handled internally, and is transparent to the user. The user
is given the facility of being able to alter the contents of the memory on a Byte-by-Byte basis.
For optimized timings, it is recommended to use the Page Write (PW) instruction to write all
consecutive targeted Bytes in a single sequence versus using several Page Write (PW)
sequences with each containing only a few Bytes (see
Page Write (PW)
and
Table 22: AC
characteristics (50 MHz operation, T9HX (0.11μm) process)
).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PE20-VMN6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMN6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMN6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMP6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMP6P | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE20-VMN6P | 功能描述:閃存 1 AND 2 MBIT LV SERIAL FL RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE20-VMN6P_NUD | 制造商:Micron Technology Inc 功能描述: |
| M25PE20-VMN6TG | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE20-VMN6TP | 功能描述:電可擦除可編程只讀存儲器 SERIAL PAGE ERASE FLASH 2 Mbit Datas RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M25PE20-VMN6TPBA | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
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