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參數(shù)資料
| 型號： | M25PE20-VMN6G |
| 廠商： | 意法半導體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 14/60頁 |
| 文件大小： | 310K |
| 代理商： | M25PE20-VMN6G |
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Operating features
M25PE20, M25PE10
14/60
4.7
Status Register
The Status Register contains two status bits that can be read by the Read Status Register
(RDSR) instruction. See
Section 6.4: Read Status Register (RDSR)
for a detailed
description of the Status Register bits.
4.8
Protection modes
The environments where non-volatile memory devices are used can be very noisy. No SPI
device can operate correctly in the presence of excessive noise. To help combat this, the
M25PE10 and M25PE20 feature the following data protection mechanisms:
4.8.1
Protocol-related protections
●
Power On Reset and an internal timer (t
PUW
) can provide protection against inadvertent
changes while the power supply is outside the operating specification.
Program, Erase and Write instructions are checked that they consist of a number of
clock pulses that is a multiple of eight, before they are accepted for execution.
All instructions that modify data must be preceded by a Write Enable (WREN)
instruction to set the Write Enable Latch (WEL) bit. This bit is returned to its reset state
by the following events:
–
Power-up
–
Reset (RESET) driven Low
–
Write Disable (WRDI) instruction completion
–
Page Write (PW) instruction completion
–
Page Program (PP) instruction completion
–
Write to Lock Register (WRLR) instruction completion
–
Page Erase (PE) instruction completion
–
SubSector Erase (SSE) instruction completion
–
Sector Erase (SE) instruction completion
–
Bulk Erase (BE) instruction completion
The Reset (Reset) signal can be driven Low to freeze and reset the internal logic. For
the specific cases of Program and Write cycles, the designer should refer to
Section 6.5: Write Status Register (WRSR)
,
Section 6.9: Page Write (PW)
,
Section 6.10: Page Program (PP)
,
Section 6.12: Page Erase (PE)
,
Section 6.14: Sector
Erase (SE)
, and
Section 6.13: SubSector Erase (SSE)
, and to
Table 14: Device status
after a Reset Low pulse
.
In addition to the low power consumption feature, the Deep Power-down mode offers
extra software protection from inadvertent Write, Program and Erase instructions while
the device is not in active use.
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PE20-VMN6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMN6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMN6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMP6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMP6P | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE20-VMN6P | 功能描述:閃存 1 AND 2 MBIT LV SERIAL FL RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE20-VMN6P_NUD | 制造商:Micron Technology Inc 功能描述: |
| M25PE20-VMN6TG | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE20-VMN6TP | 功能描述:電可擦除可編程只讀存儲器 SERIAL PAGE ERASE FLASH 2 Mbit Datas RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M25PE20-VMN6TPBA | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
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