參數(shù)資料
型號(hào)： M25PE20-VMN6G
廠商： 意法半導(dǎo)體
元件分類(lèi)： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門(mén)，串行閃存
文件頁(yè)數(shù)： 21/60頁(yè)
文件大?。?/td> 310K
代理商： M25PE20-VMN6G
M25PE20, M25PE10
Instructions
21/60
6
Instructions
All instructions, addresses and data are shifted in and out of the device, most significant bit
first.
Serial Data Input (D) is sampled on the first rising edge of Serial Clock (C) after Chip Select
(S) is driven Low. Then, the one-Byte instruction code must be shifted in to the device, most
significant bit first, on Serial Data Input (D), each bit being latched on the rising edges of
Serial Clock (C).
The instruction set is listed in
Table 7
.
Every instruction sequence starts with a one-Byte instruction code. Depending on the
instruction, this might be followed by address Bytes, or by data Bytes, or by both or none.
In the case of a Read Data Bytes (READ), Read Data Bytes at Higher Speed (Fast_Read),
Read Status Register (RDSR) or Read to Lock Register (RDLR) instruction, the shifted-in
instruction sequence is followed by a data-out sequence. Chip Select (S) can be driven High
after any bit of the data-out sequence is being shifted out.
In the case of a Page Write (PW), Page Program (PP), Page Erase (PE), SubSector Erase
(SSE), Sector Erase (SE), Bulk Erase (BE), Write Enable (WREN), Write Disable (WRDI),
Write Status Register (WRSR), Write to Lock Register (WRLR), Deep Power-down (DP) or
Release from Deep Power-down (RDP) instruction, Chip Select (S) must be driven High
exactly at a byte boundary, otherwise the instruction is rejected, and is not executed. That is,
Chip Select (S) must driven High when the number of clock pulses after Chip Select (S)
being driven Low is an exact multiple of eight.
All attempts to access the memory array during a Write cycle, Program cycle or Erase cycle
are ignored, and the internal Write cycle, Program cycle or Erase cycle continues
unaffected.
相關(guān)PDF資料
PDF描述
M25PE20-VMN6P 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMN6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMN6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMP6G 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMP6P 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PE20-VMN6P 功能描述:閃存 1 AND 2 MBIT LV SERIAL FL RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M25PE20-VMN6P_NUD 制造商:Micron Technology Inc 功能描述:
M25PE20-VMN6TG 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout
M25PE20-VMN6TP 功能描述:電可擦除可編程只讀存儲(chǔ)器 SERIAL PAGE ERASE FLASH 2 Mbit Datas RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
M25PE20-VMN6TPBA 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel
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