參數(shù)資料
型號: M32000D3FP
廠商: Mitsubishi Electric Corporation
英文描述: SINGLE-CHIP 32-BIT CMOS MICROCOMPUTER
中文描述: 單芯片32位CMOS微機
文件頁數(shù): 36/45頁
文件大?。?/td> 565K
代理商: M32000D3FP
SINGLE-CHIP 32-BIT CMOS MICROCOMPUTER
MITSUBISHI MICROCOMPUTERS
M32000D3FP
36
SWITCHING CHARACTERISTICS
(VCC = 3.3 ± 0.3 V, CL = 50 pF, TOPR = 0 to 70 °C unless otherwise noted)
Limits
Typ.
Symbol
Parameter
Test conditions
(1) Output transition time
tr(OUTPUT)
tf(OUTPUT)
Reference
number
3
4
Min.
Unit
Max.
8
8
Output rising transition time
Output falling transition time
ns
ns
(2) Read and write timing
Limits
Symbol
td(CLKIN-BSHX)
td(CLKIN-BSL)
td(CLKIN-BSLX)
td(CLKIN-BSH)
td(CLKIN-AV)
td(CLKIN-AX)
td(CLKIN-BCV)
td(CLKIN-BCX)
td(CLKIN-SIDV)
td(CLKIN-SIDX)
td(CLKIN-STV)
td(CLKIN-STX)
td(CLKIN-RWV)
td(CLKIN-RWX)
td(CLKIN-BURSTHX)
td(CLKIN-BURSTL)
td(CLKIN-BURSTLX)
td(CLKIN-BURSTH)
td(CLKIN-DZX)
td(CLKIN-DV)
td(CLKIN-DVX)
td(CLKIN-DXZ)
Reference
number
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
32
33
34
35
Min.
Unit
Max.
BS = “H” effective time after CLKIN
BS = “L” delay time after CLKIN
BS = “L” effective time after CLKIN
BS = “H” delay time after CLKIN
Address delay time after CLKIN
____
___
____
___
SID delay time after CLKIN
SID effective time after CLKIN
ST delay time after CLKIN
ST effective time after CLKIN
R/W delay time after CLKIN
R/W effective time after CLKIN
BURST = “H” effective time after CLKIN
BURST = “L” delay time after CLKIN
BURST = “L” effective time after CLKIN
BURST = “H” delay time after CLKIN
Data output enable time after CLKIN
Data output delay time after CLKIN
Data output effective time after CLKIN
Data output disable time after CLKIN
Parameter
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
12
tc(CLKIN)/4+8
16
16
16
16
16
12
12
18
16
Test
conditions
0
tc(CLKIN)/4
0
0
0
0
0
0
0
0
0
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