參數(shù)資料
型號: M36DR432A100ZA6C
廠商: 意法半導體
英文描述: 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
中文描述: 32兆位的2Mb x16插槽,雙行,頁閃存和4兆位256K x16的SRAM,多個存儲產(chǎn)品
文件頁數(shù): 19/52頁
文件大小: 834K
代理商: M36DR432A100ZA6C
19/52
M36DR432AD, M36DR432BD
Table 8. Read Protection Register
Note: X= Don’t care.
Table 9. Program, Erase Times and Program, Erase Endurance Cycles
Note: 1. Excludes the time needed to execute the sequence for program command.
2. Same timing value if V
PPF
= 12V
Flash Block Locking
The Flash memory features an instant, individual
block locking scheme that allows any block to be
locked or unlocked with no latency. This locking
scheme has two levels of protection.
I
Lock/Unlock - this first level allows software-
only control of block locking.
I
Lock-Down - this second level requires
hardware interaction before locking can be
changed.
The protection status of each block can be set to
Locked, Unlocked, and Lock-Down. Table 10, de-
fines all of the possible protection states (WPF,
DQ1, DQ0).
Reading a Block’s Lock Status
The lock status of every block can be read in the
Auto Select mode of the device. Subsequent
reads at the address specified in Table 6, will out-
put the protection status of that block. The lock
status is represented by DQ0 and DQ1. DQ0 indi-
cates the Block Lock/Unlock status and is set by
the Lock command and cleared by the Unlock
command. It is also automatically set when enter-
Word
EF
GF
WF
A20-A8
A7-0
DQ15-8
DQ7-3
DQ2
DQ1
DQ0
Lock
V
IL
V
IL
V
IH
X
80h
XXh
00000b
Security
prot.data
OTP
prot.data
0
Unique ID 0
V
IL
V
IL
V
IH
X
81h
ID data
ID data
ID data
ID data
ID data
Unique ID 1
V
IL
V
IL
V
IH
X
82h
ID data
ID data
ID data
ID data
ID data
Unique ID 2
V
IL
V
IL
V
IH
X
83h
ID data
ID data
ID data
ID data
ID data
Unique ID 3
V
IL
V
IL
V
IH
X
84h
ID data
ID data
ID data
ID data
ID data
OTP 0
V
IL
V
IL
V
IH
X
85h
OTP data
OTP data
OTP data
OTP data
OTP data
OTP 1
V
IL
V
IL
V
IH
X
86h
OTP data
OTP data
OTP data
OTP data
OTP data
OTP 2
V
IL
V
IL
V
IH
X
87h
OTP data
OTP data
OTP data
OTP data
OTP data
OTP 3
V
IL
V
IL
V
IH
X
88h
OTP data
OTP data
OTP data
OTP data
OTP data
Parameter
M36DR432AD, M36DR432BD
Unit
Min
Max
Typ
Typical after
100k W/E Cycles
Parameter Block (4 KWord) Erase (Preprogrammed)
2.5
0.3
1
s
Main Block (32 KWord) Erase (Preprogrammed)
4
0.8
3
s
Bank Erase (Preprogrammed, Bank A)
3
6
s
Bank Erase (Preprogrammed, Bank B)
20
30
s
Chip Program
(1)
20
25
s
Chip Program (Double Word, V
PPF
= 12V)
(1)
8
s
Word Program
(2)
100
10
μs
Double Word Program (V
PPF
= 12V)
100
8
μs
Quadruple Word Program (V
PPF
= 12V)
100
8
μs
Program/Erase Cycles (per Block)
100,000
cycles
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參數(shù)描述
M36DR432A100ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432A10CZA6 功能描述:閃存 32M (2Mx16) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M36DR432A10CZA6T 功能描述:閃存 32M (2Mx16) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M36DR432A120ZA6C 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432A120ZA6T 功能描述:閃存 32M (2Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel