參數(shù)資料
型號： M36DR432A100ZA6C
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
中文描述： 32兆位的2Mb x16插槽，雙行，頁閃存和4兆位256K x16的SRAM，多個(gè)存儲產(chǎn)品
文件頁數(shù)： 9/52頁
文件大?。?/td> 834K
代理商： M36DR432A100ZA6C
9/52
M36DR432AD, M36DR432BD
the memory and reduces the power consumption
to the standby level. ES can also be used to con-
trol writing to the SRAM memory array, while WS
remains at V
IL
. It is not allowed to set EF at V
IL
and
ES at V
IL
at the same time.
SRAM Write Enable (WS).
The Write Enable in-
put controls writing to the SRAM memory array.
WS is active Low.
SRAM Output Enable (GS).
The Output Enable
gates the outputs through the data buffers during
a read operation of the SRAM chip. GS is active
Low.
SRAM Upper Byte Enable (UBS).
Enables the
upper bytes for SRAM (DQ8-DQ15). UBS is active
Low.
SRAM Lower Byte Enable (LBS).
Enables the
lower bytes for SRAM (DQ0-DQ7). LBS is active
Low.
V
DDS
Supply Voltage (1.65V to 2.2V).
V
DDS
is the
SRAM power supply for all operations.
Note: Each device in a system should have
V
DDF
and V
PPF
decoupled with a 0.1μF capaci-
tor close to the pin. See Figure 7, AC Measure-
ment Load Circuit. The PCB trace widths
should be sufficient to carry the required V
PPF
program and erase currents.
相關(guān)PDF資料
PDF描述
M36DR432DA85ZA6T 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432DA10ZA6T 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432CZA 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432BD85ZA6T 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
M36DR432BD 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36DR432A100ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432A10CZA6 功能描述:閃存 32M (2Mx16) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M36DR432A10CZA6T 功能描述:閃存 32M (2Mx16) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M36DR432A120ZA6C 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432A120ZA6T 功能描述:閃存 32M (2Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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