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參數(shù)資料
| 型號(hào)： | M36DR432A120ZA6C |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，頁閃存和4兆位256K x16的SRAM，多個(gè)存儲(chǔ)產(chǎn)品 |
| 文件頁數(shù)： | 23/52頁 |
| 文件大?。?/td> | 834K |
| 代理商： | M36DR432A120ZA6C |
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M36DR432AD, M36DR432BD
Table 12. Status Register Bits
Note: 1. Logic level ’1’ is High, ’0’ is Low. -0-1-0-0-0-1-1-1-0- represent bit value in successive read operations.
2. In case of double word program DQ7 refers to the last word input.
DQ
Name
Logic Level
Definition
Note
7
Data
Polling
’1’
Erase complete or erase block
in Erase Suspend.
Indicates the P/E.C. status, check
during Program or Erase, and on
completion before checking bits DQ5
for Program or Erase success.
’0’
Erase in progress
DQ
Program complete or data of
non erase block during Erase
Suspend.
DQ
Program in progress
(2)
6
Toggle Bit
’-1-0-1-0-1-0-1-’
Erase or Program in progress
Successive reads output
complementary data on DQ6 while
Programming or Erase operations are
in progress. DQ6 remains at constant
level when P/E.C. operations are
completed or Erase Suspend is
acknowledged.
DQ
Program complete
’-1-1-1-1-1-1-1-’
Erase complete or Erase
Suspend on currently addressed
block
5
Error Bit
’1’
Program or Erase Error
This bit is set to ’1’ in the case of
Programming or Erase failure.
’0’
Program or Erase in progress
4
Reserved
3
Erase Time
Bit
’1’
Erase Timeout Period Expired
P/E.C. Erase operation has started.
Only possible command entry is Erase
Suspend
’0’
Erase Timeout Period in
progress
An additional block to be erased in
parallel can be entered to the P/E.C
provided that it belongs to the same
bank
2
Toggle Bit
’-1-0-1-0-1-0-1-’
Erase Suspend read in the
Erase Suspended Block.
Erase Error due to the currently
addressed block (when DQ5 =
’1’).
Indicates the erase status and allows
to identify the erased block.
1
Program in progress or Erase
complete.
DQ
Erase Suspend read on non
Erase Suspend block.
1
Reserved
0
Reserved
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36DR432A120ZA6T | 功能描述:閃存 32M (2Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M36DR432A12CZA6T | 功能描述:閃存 32M (2Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M36DR432AD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
| M36DR432AD10ZA6T | 功能描述:組合存儲(chǔ)器 32M (2Mx16) 100ns RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray |
| M36DR432AD12ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
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