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參數(shù)資料
| 型號(hào)： | M36L0R7050B0ZAQE |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | ER 23C 16 12 8 4 SKT RECP WALL |
| 中文描述： | 128兆位（多銀行，多層次，突發(fā)）閃存32兆位（200萬(wàn)× 16）移動(dòng)存儲(chǔ)芯片，1.8V電源多芯片封裝 |
| 文件頁(yè)數(shù)： | 14/18頁(yè) |
| 文件大?。?/td> | 406K |
| 代理商： | M36L0R7050B0ZAQE |
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M36L0R7050T0, M36L0R7050B0
14/18
Table 8. Flash Memory DC Characteristics - Voltages
Table 9. PSRAM DC Characteristics
Symbol
Note: 1. Maximum DC voltage on input and I/O pins is V
DDP
+ 0.2V.
During voltage transitions, input may positive overshoot to V
DDP
+ 1.0V for a period of up to 5ns.
2. Minimum DC voltage on input or I/O pins is –0.3V.
During voltage transitions, input may positive overshoot to V
SSP
+ 1.0V for a period of up to 5ns.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
V
IL
Input Low Voltage
–0.5
0.4
V
V
IH
Input High Voltage
V
DDQ
–0.4
V
DDQ
+ 0.4
V
V
OL
Output Low Voltage
I
OL
= 100μA
0.1
V
V
OH
Output High Voltage
I
OH
= –100μA
V
DDQ
–0.1
V
V
PP1
V
PPF
Program Voltage-Logic
Program, Erase
1.1
1.8
3.3
V
V
PPH
V
PPF
Program Voltage Factory
Program, Erase
8.5
9.0
12.6
V
V
PPLK
Program or Erase Lockout
0.4
V
V
LKO
V
DDF
Lock Voltage
1
V
V
RPH
RP
F
pin Extended High Voltage
3.3
V
Parameter
Test Condition
Min
Max
Unit
I
CC1
V
DDP
Active Current
V
DDP
= 1.95V,
V
IN
= V
IH
or V
IL
,
E1
P
= V
IL
and E2
P
= V
IH
,
I
OUT
= 0mA
t
RC
/ t
WC
=
minimum
25
mA
I
CC2
t
RC
/ t
WC
=
1 μs
3
mA
I
CC3
V
DDP
Page Read Current
V
DDP
= 1.95V,
V
IN
= V
IH
or V
IL
,
E1
P
= V
IL
and E2
P
= V
IH
,
I
OUT
= 0mA, t
PRC
= min.
10
mA
I
CCPD
V
DDP
Power-Down Current
V
DDP
= 1.95V,
V
IN
= V
IH
or V
IL
,
E2
P
≤
0.2V
Deep Power-
Down
10
μA
I
CCP4
4Mb Partial
(3)
40
μA
I
CCP8
8Mb Partial
(3)
50
μA
I
CCP16
16Mb Partial
(3)
65
μA
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
DDP
–1
1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
DDP
–1
1
μA
I
SB
Standby Supply Current CMOS
V
DDP
= 1.95V,
V
IN
≤
0.2V or V
IN
≥
V
DDP
–0.2V,
E1
P
= E2
P
≥
V
DDP
–0.2V
100
μA
V
IH (1)
Input High Voltage
0.8V
DDP
V
DDP
+ 0.2
V
V
IL (2)
Input Low Voltage
–0.3
0.2V
DDP
V
V
OH
Output High Voltage
V
DDP
= 1.65V, I
OH
= –0.5mA
1.4
V
V
OL
Output Low Voltage
I
OL
= 1mA
0.4
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36L0R7050B0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
| M36L0R7050B0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
| M36L0R7050B1ZAQE | 制造商:Micron Technology Inc 功能描述:128M (8MX16) FLASH, 32M PSRAM, 1.8V, TFBGA88, IND, HAZMAT - Trays |
| M36L0R7050B3ZAQE | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
| M36L0R7050B3ZAQF | 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel |
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