參數(shù)資料
型號(hào): M36L0R7050B0ZAQE
廠商: 意法半導(dǎo)體
英文描述: ER 23C 16 12 8 4 SKT RECP WALL
中文描述: 128兆位(多銀行,多層次,突發(fā))閃存32兆位(200萬(wàn)× 16)移動(dòng)存儲(chǔ)芯片,1.8V電源多芯片封裝
文件頁(yè)數(shù): 8/18頁(yè)
文件大小: 406K
代理商: M36L0R7050B0ZAQE
M36L0R7050T0, M36L0R7050B0
8/18
FUNCTIONAL DESCRIPTION
The PSRAM and Flash memory components have
separate power supplies but share the same
grounds. They are distinguished by three Chip En-
able inputs: E
F
for the Flash memory and E1
P
and
E2
P
for the PSRAM.
Recommended operating conditions do not allow
more than one device to be active at a time. The
most common example is simultaneous read oper-
ations in the Flash memory and the PSRAM which
would result in a data bus contention. Therefore it
is recommended to put the other device in the high
impedance state when reading the selected de-
vice.
Figure 4. Functional Block Diagram
AI08733
RP
F
WP
F
L
F
E1
P
G
P
W
P
E2
P
UB
P
LB
P
DQ0-DQ15
V
DDF
V
PPF
A21-A22
32 Mbit
PSRAM
G
F
W
F
WAIT
F
K
F
V
SS
128 Mbit
Flash
Memory
V
DDP
E
F
A0-A20
V
DDQ
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36L0R7050B0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
M36L0R7050B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
M36L0R7050B1ZAQE 制造商:Micron Technology Inc 功能描述:128M (8MX16) FLASH, 32M PSRAM, 1.8V, TFBGA88, IND, HAZMAT - Trays
M36L0R7050B3ZAQE 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
M36L0R7050B3ZAQF 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel